ISSCC 2010
Session 16
Data Converters
A 10b 100MS/s 4.5mW Pipelined ADC with a Time Sharing Technique
For the applications requiring medium-to-high resolution ADCs, the pipelined architecture is considered to be the most optimal structure in terms of power consumption and area. With range overlap and redundant bit at eac
ISSCC 2010
Session 16
Data Converters
A 1.4V Signal Swing Hybrid CLS-Opamp/ZCBC Pipelined ADC Using a 300mV Output Swing Opamp
Scaling in CMOS technologies has made the application of traditional opamp topologies increasingly difficult. In the face of decreasing voltage headroom and intrinsic device gain, designers have employed techniques such
ISSCC 2010
Session 16
Data Converters
A 110dB SNR and 0.5mW Current-Steering Audio DAC Implemented in 45nm CMOS
longer battery life and lower cost. Achieving low out–of-band noise (OBN) is one of the key elements in designing inexpensive, low-power and robust audio DACs. Lowering OBN reduces the sensitivity to circuit mismatch, gl
ISSCC 2010
Session 17
Sensors
A System-on-Chip EPC Gen-2 Passive UHF RFID Tag with Embedded Temperature Sensor
Kwok Ping Ng, Bo Gao, Howard Cam Luong, Amine Bermak, Mansun Chan, Wing-Hung Ki, Chi-Ying Tsui, Matthew Ming-Fai Yuen Hong Kong University of Science and Technology, Hong Kong, China A system-on-chip passive UHF RFID tag
ISSCC 2010
Session 17
Sensors
A 1.2V 10µW NPN-Based Temperature Sensor in 65nm CMOS with an Inaccuracy of ±0.2°C (3σ) from –70°C to 125°C
Salvatore Drago1,3, Domine M. W, Leenaerts1, Bram Nauta3 1 NXP Semiconductors, Eindhoven, Netherlands Delft University of Technology, Delft, Netherlands 3 University of Twente, Enschede, Netherlands 2 This paper describe
ISSCC 2010
Session 17
Sensors
A Thermal-Diffusivity-Based Temperature Sensor with an Untrimmed Inaccuracy of ±0.2°C (3σ) from –55°C to 125°C
based on the thermal diffusivity of silicon. Its digital output is insensitive to both process spread and packaging stress and is a near-linear function of absolute temperature. The sensor’s accuracy is mainly limited by
ISSCC 2010
Session 17
Sensors
An In-Situ Temperature-Sensing Interface Based on a SAR ADC in 45nm LP Digital CMOS for the Frequency-Temperature Compensation of Crystal Oscillators
L.Richard Carley1, Jonathan C. Jensen2 1 Carnegie Mellon University, Pittsburgh, PA Intel, Hillsboro, OR 3 Intel, Haifa, Israel 2 Multi-radio (3G/4G/GPS) mobile communication devices impose stringent requirements (<1ppm)
ISSCC 2010
Session 17
Sensors
A 76dBΩ 1.7GHz 0.18µm CMOS Tunable Transimpedance Amplifier Using Broadband Current Pre-Amplifier for High Frequency Lateral Micromechanical Oscillators
Georgia Institute of Technology, Atlanta, GA Oklahoma State University, Tulsa, OK 2 The frequency reference oscillator is a pivotal block in modern radio transceivers. Currently, modern transceivers rely on off-chip low
ISSCC 2010
Session 17
Sensors
A Closed-Loop SC Interface for a ±1.4g Accelerometer with 0.33% Nonlinearity and 2µg/√Hz Input Noise Density
which allows the resonances of the element to be efficiently damped and permits, for example, an open-loop readout of the element. If the accelerometer is required to attain very low Brownian noise levels or packaged tog
ISSCC 2010
Session 17
Sensors
A 200MHz 300ps 0.5pJ/ns Optical Pulse Generator Array in 0.35µm CMOS
United Kingdom 2 Short optical pulses are required for diagnostic techniques in life sciences such as fluorescence lifetime imaging, which can be used for quantitative detection of ion concentrations, oxygen and fluoresc
ISSCC 2010
Session 18
Power Management
A 222mW H.264 Full-HD Decoding Application Processor with x512b Stacked DRAM in 40nm
Hideaki Yamamoto, Yousuke Hagiwara, Tetsuya Fujita, Manabu Watanabe, Takayoshi Shimazawa, Yasuo Ohara, Takashi Miyamori, Mototsugu Hamada, Masafumi Takahashi, Yukihito Oowaki Toshiba, Kawasaki, Japan Today’s multimedia m
ISSCC 2010
Session 18
Power Management
A 320mV-to-1.2V On-Die Fine-Grained Reconfigurable Fabric for DSP/Media Accelerators in 32nm CMOS
Himanshu Kaul, Farhana Sheikh, Rajaraman Ramanarayanan, Suresh Srinivasan, Ram Krishnamurthy, Shekhar Borkar Intel, Hillsboro, OR Computationally intensive DSP/media processing applications require specialized hardware a
ISSCC 2010
Session 18
Power Management
A 59.5mW Scalable/Multi-View Video Decoder Chip for Quad/3D Full HDTV and Video Streaming Applications
applications are emerging. The first involves more vivid perceptual experience and is leading to the next generation of TV specifications – Quad Full HD (QFHD, 4096×2160p) and 3D/multi-view TV. The second is the scalable
ISSCC 2010
Session 18
AI / ML
A 345mW Heterogeneous Many-Core Processor with an Intelligent Inference Engine for Robust Object Recognition
challenges: (1) the large number of features to process requires high computational power, and (2) false matches from background clutter can degrade recognition accuracy. Previously, saliency based bottom-up visual atten
ISSCC 2010
Session 18
Power Management
A Scalable Massively Parallel Processor for RealTime Image Processing
Takayuki Gyoten1, Tetsu Nishijima1, Hiroyuki Yamasaki1, Yuta Imai2, Masakatsu Ishizaki1, Takeshi Kumaki2, Yoshihiro Okuno1, Tetsushi Koide2, Hans Jürgen Mattausch2, Kazutami Arimoto1 1 Renesas Technology, Itami, Japan Hi
ISSCC 2010
Session 18
Power Management
A Graphics and Vision Unified Processor with 0.89µW/fps Pose Estimation Engine for Augmented Reality
Graphics processing generates pixels from descriptors, while vision generates descriptors from pixels [1]. Since augmented reality (AR) requires both graphics and vision abilities (Fig. 18.6.1), we report a unified proce
ISSCC 2010
Session 18
Power Management
A Multimedia Semantic Analysis SoC (SASoC) with Machine-Learning Engine
versatile multimedia applications with semantic processing abilities. Realtime applications, such as face detection, facial-expression recognition, scene analysis [2] and object recognition [3], have become indispensable
ISSCC 2010
Session 19
Memory
A 45nm SOI Embedded DRAM Macro for POWER7TM 32MB On-Chip L3 Cache
Gregory Fredeman2, Michael Sperling2, Abraham Mathews3, William Reohr4, Kavita Nair2, Nianzheng Cao2 1 IBM, Essex Junction, VT IBM, Poughkeepsie, NY 3 IBM, Austin, TX 4 IBM T. J. Watson, Yorktown Heights, NY 2 Logic-base
ISSCC 2010
Session 19
Memory
A 32kB 2R/1W L1 Data Cache in 45nm SOI Technology for the POWER7TM Processor
Wolfgang Penth1, Thomas Froehnel1, Stefan Buettner1, Otto Torreiter1, Martin Eckert1, Jose Paredes2, David Hrusecky2, David Ray2, Miles Canada3 1 IBM, Boeblingen, Germany IBM, Austin, TX 3 IBM, Burlington, VT 2 Increasin
ISSCC 2010
Session 19
Memory
A 32nm High-κ Metal Gate SRAM with Adaptive Dynamic Stability Enhancement for Low-Voltage Operation
performance, and density requirements as Moore’s law continues to drive CMOS technology scaling. Due to process variation, SRAM bitcell design margin continues to shrink in scaled technologies and conventional SRAM is no
ISSCC 2010
Session 19
Memory
A Configurable SRAM with Constant-Negative-Level Write Buffer for Low-Voltage Operation with 0.149µm2 Cell in 32nm High-κ Metal-Gate CMOS
Atsushi Kawasumi, Yasuhisa Takeyama, Keiichi Kushida, Gou Fukano, Akira Katayama, Yusuke Niki, Tomoaki Yabe Toshiba Semiconductor, Kawasaki, Japan This paper presents a configurable SRAM for low-voltage operation with co
ISSCC 2010
Session 19
Memory
A 512kb 8T SRAM Macro Operating Down to 0.57V with An AC-Coupled Sense Amplifier and Embedded Data-Retention-Voltage Sensor in 45nm SOI CMOS
J. Watson, Yorktown Heights, NY There is a need for large embedded memory that operates over a wide range of supply voltage compatible with the limits of static CMOS logic that also minimizes standby power [1,2]. A 512kb
ISSCC 2010
Session 19
Memory
PVT-and-Aging Adaptive Wordline Boosting for 8T SRAM Power Reduction
19.6.1) is commonly used in single-VCC microprocessor core for its performance critical low-level caches and multi-ported register-file arrays
ISSCC 2010
Session 19
Memory
SRAM Stability Characterization Using Tunable Ring Oscillators in 45nm CMOS
J. Watson, Yorktown Heights, NY 2 It is desirable to observe the cell read current at lower cell supplies. Lowering the array supply voltage VCELL can magnify the effect of read disturbance that raises the internal node
ISSCC 2010
Session 19
Memory
A 0.5V 100MHz PD-SOI SRAM with Enhanced Read Stability and Write Margin by Asymmetric MOSFET and Forward Body Bias
characteristics reduce the operational margin of SRAM functionality, and several design techniques have been suggested to improve margins [1-3]. However, it is still difficult to achieve low-voltage operation (less than
ISSCC 2010
Session 2
RF & Wireless
A True Time-Delay-Based Bandpass Multi-Beam Array at mm-Waves Supporting Instantaneously Wide Bandwidths
The phased array is a common technique where multiple spaced antennas electronically form and scan narrow electromagnetic beams to achieve spatial selectivity. These arrays are also referred to as steering arrays. On the
ISSCC 2010
Session 2
RF & Wireless
A Wideband Beamformer for a Phased-Array 60GHz Receiver in 40nm Digital CMOS
U. Leuven, Leuven, Belgium 3 Vrije Universiteit Brussel, Brussels, Belgium 2 For high-data-rate wireless communication in the 7GHz band around 60GHz, the IEEE 802.15.3c standard [1] provides channels with a 0.88GHz bandw
ISSCC 2010
Session 2
RF & Wireless
A 60GHz-Band 2×2 Phased-Array Transmitter in 65nm CMOS
independent tuning of both vertical and horizontal polarizations realized in 65nm bulk CMOS is described in this paper. Phased-array transmitters increase the isotropic radiated power of a stand-alone transmitter over a
ISSCC 2010
Session 2
RF & Wireless
A 5.2-to-13GHz Class-AB CMOS Power Amplifier with a 25.2dBm Peak Output Power at 21.6% PAE
The ever-increasing demand for higher data rates in communication links has created a need for power amplifiers with large instantaneous bandwidth. Moreover, software-defined radio and smart antenna systems require power
ISSCC 2010
Session 2
RF & Wireless
GHz DCO with a Frequency Resolution of 150Hz for All-Digital PLL
In all-digital phase-locked loops (ADPLLs), the quantization noise introduced by the frequency discretization in the digitally controlled oscillator (DCO) can affect the performance in terms of out-of-band phase noise. I
ISSCC 2010
Session 2
RF & Wireless
Suppression of Flicker Noise Upconversion in a 65nm CMOS VCO in the 3.0-to-3.6GHz Band
Flicker noise up-conversion into close-in 1/f3 phase noise is still one of the major issues in the design of CMOS oscillators. Suppression techniques have been recently presented suggesting (i) adoption of a resonant net
ISSCC 2010
Session 2
RF & Wireless
A 9.2µA Gen 2 Compatible UHF RFID Sensing Tag with -12dBm Sensitivity and 1.25µVrms InputReferred Noise Floor
Passive RFID technology enables battery-free wearable and implantable sensors with an unlimited lifespan, small size, and sub-gram weight. These properties facilitate advanced biomedical research (such as untethered moni
ISSCC 2010
Session 20
RF & Wireless
10Gb/s 15mW Optical Receiver with Integrated Germanium Photodetector and Hybrid Inductor Peaking in 0.13µm SOI CMOS Technology
Sherif Abdalla, Jeremy Witzens, Subal Sahni Luxtera, Carlsbad, CA As data networks scale to meet increasing bandwidth requirements, the shortcomings of copper channels are becoming more apparent. Dispersion, attenuation,
ISSCC 2010
Session 20
RF & Wireless
An 8.5Gb/s CMOS OEIC with On-Chip Photodiode for Short-Distance Optical Communications
Yonsei University, Seoul, Korea Ewha Womans University, Seoul, Korea 2 Recently, low-cost silicon optoelectronic integrated circuits (OEICs) have been drawing attention for applications in short-distance optical communic
ISSCC 2010
Session 20
RF & Wireless
A 1.296-to-5.184Gb/s Transceiver with 2.4mW/(Gb/s) Burst-mode CDR using Dual-Edge Injection-Locked Oscillator
Yasunori Tsukuda1, Yuki Yagishita1, Hironobu Konishi2, Toshiyuki Ogata2, Hisashi Owa1, Taichi Niki1, Kenji Konda1, Masahiro Sato1, Hiroshi Shiroshita1, Takeshi Ogura1, Takayuki Aoki1, Hiroki Kihara1, Sachiya Tanaka1 1 So
ISSCC 2010
Session 20
RF & Wireless
A 78mW 11.8Gb/s Serial Link Transceiver with Adaptive RX Equalization and Baud-Rate CDR in 32nm CMOS
Doug Gambetta1, Sujatha Gowder1, Sitaraman Iyer1, Rohit Kumar1, Peter Kwok1, Renuka Krishnamurthy1, Chien-chun Lin1, Ravindran Mohanavelu1, Roan Nicholson1, Jeff Ou1, Marcus Pasquarella1, Kavitha Prasad1, Hendra Rustam1,
ISSCC 2010
Session 20
RF & Wireless
A 12.3mW 12.5Gb/s Complete Transceiver in 65nm CMOS
power dissipation per Gb/s to less than 1mW/(Gb/s) (i.e., 1pJ/b) has been a long-held goal. Several years ago, the power dissipation of these links was in the range of about 10 to 20mW/(Gb/s). In 2007, Poulton et al. dev
ISSCC 2010
Session 20
RF & Wireless
A 32mW 7.4Gb/s Protocol-Agile Source-SeriesTerminated Transmitter in 45nm CMOS SOI
Teva Stone1, Barry Daly1 1 Rambus, Chapel Hill, NC, Rambus, Bangalore, India 2 Source-series-terminated (SST) transmitters consume ¼ the output stage power of CML drivers [1], but their adoption in industry-standard mult
ISSCC 2010
Session 20
RF & Wireless
A 5-to-25Gb/s 1.6-to-3.8mW/(Gb/s) Reconfigurable Transceiver in 45nm CMOS
systems span a wide range: from 1-to-2mm on-package links (OPLs) in MCMs, to 25-to-100cm backplanes in server systems. Signaling with optimal power efficiency over such a diverse set of channels requires adaptation of th
ISSCC 2010
Session 20
RF & Wireless
A 2×25Gb/s Deserializer with 2:5 DMUX for 100Gb/s Ethernet Applications
The ever growing bandwidth requirement for novel server technologies including multi-core processing, virtualization, and networked storage leads to multichannel Internet connectivity such as 100GbE. Among the proposed s
ISSCC 2010
Session 21
Data Converters
An 18b 12.5MHz ADC with 93dB SNR
21.1.3. To allow auto-zeroing of offset and 1/f noise, additional switches are added to allow the amplified offset and 1/f noise of the first stage to be stored on the inter-stage capacitors C1 and C2. Since a full ten b
ISSCC 2010
Session 21
Data Converters
A 12b 22.5/45MS/s 3.0mW 0.059mm2 CMOS SAR ADC Achieving Over 90dB SFDR
CMOS technology scaling has opened a pathway to high-performance analogto-digital conversion in the nanometer regime, where switching is preferred over amplifying. Successive-approximation-register (SAR) is one of the co
ISSCC 2010
Session 21
Data Converters
A 0.06mm2 8.9b ENOB 40MS/s Pipelined SAR ADC in 65nm CMOS
In 10b SAR ADCs, one of the major design challenges is the large number of capacitors for implementing the capacitor array. A large unit capacitance should be used due to the design constraint of capacitor mismatches and
ISSCC 2010
Session 21
Data Converters
A 10b 50MS/s 820µW SAR ADC with On-Chip Digital Calibration
power efficient ADCs. SAR ADC power scales with CMOS technology because it does not need operational amplifiers, which are getting difficult to design in deeply scaled CMOS. Recent published SAR ADCs have no static curre
ISSCC 2010
Session 21
Data Converters
A 10b 100MS/s 1.13mW SAR ADC with Binary-Scaled Error Compensation
with three compensative capacitors can tolerate settling error of at least 12.5% in each bit cycle. Note the precise error tolerance range depends on where the wrong decision occurs. The amplitude of the input signal swi
ISSCC 2010
Session 21
Data Converters
A 30fJ/Conversion-Step 8b 0-to-10MS/s Asynchronous SAR ADC in 90nm CMOS
power-efficient ADCs. Moreover, the power-efficiency should be maintained for a wide range of sampling rates to enable system-level flexibility. Previously, the use of SAR ADCs has been proposed for low-power application
ISSCC 2010
Session 21
Data Converters
A 40GS/s 6b ADC in 65nm CMOS
Robert Gibbins, Chris Falt, Philip Flemke, Naim Ben-Hamida, Daniel Pollex, Peter Schvan, Shing-Chi Wang Nortel, Ottawa, Canada Progress in 40Gb/s optical dual- polarization (DP) QPSK systems inspired an idea of 100G tran
ISSCC 2010
Session 22
Image Sensors
A 2.1Mpixel 120frame/s CMOS Image Sensor with Column-Parallel ΔΣ ADC Architecture
the demands for high-density and high-speed imaging have increased drastically. Since CMOS image sensors have the advantages of low power consumption and easy system integration, they have become dominant over CCDs in th
ISSCC 2010
Session 22
Image Sensors
A 1.1e- Temporal Noise 1/3.2-inch 8Mpixel CMOS Image Sensor using Pseudo-Multiple Sampling
Youngkyun Jeong, Seungjin Lee, Hansoo Lee, Sin-Hwan Lim, Yunseok Han, Jinwoo Kim, Jaecheol Yun, Seogheon Ham, Yun-Tae Lee Samsung Electronics, Yongin, Korea The noise performance of CMOS image sensors has improved signif
ISSCC 2010
Session 22
Image Sensors
A 2.7e- Temporal Noise 99.7% Shutter Efficiency 92dB Dynamic Range CMOS Image Sensor with Dual Global Shutter Pixels
A low-noise global shutter CMOS image sensor is a next challenge to expand the market for CMOS image sensors. A low-noise global electronic shutter can be used for various applications such as high-speed imaging, machine