ISSCC 2012

2012

188 篇论文 · Power Management (22) · Memory (19) · Image Sensors (18) · Data Converters (16) · RF & Wireless (15)

ISSCC 2012 Session 16 Power Management
An Optimized Driver for SiC JFET-Based Switches Delivering More Than 99% Efficiency
Karl Norling, Christian Lindholm, Dieter Draxelmayr
Nowadays, there is a high demand for highly efficient power converters that can be put in systems such as power factor correctors or solar panels. A silicon carbide (SiC) based power switch has a very good performance wh
Infineon Technologies, Villach, Austria
ISSCC 2012 Session 16 Power Management
An Adaptive Reconfigurable Active Voltage Doubler/Rectifier for Extended-Range Inductive Power Transmission
Hyung-Min Lee, Maysam Ghovanloo
Modern implantable microelectronic devices (IMDs) require higher performance and power efficiency to enable more efficacious therapies, particularly in neuroprostheses such as retinal and cochlear implants [1]. Inductive
Georgia Institute of Technology, Atlanta, GA
ISSCC 2012 Session 16 Power Management
Voltage-Boosting Wireless Power Delivery System with Fast Load Tracker by ΔΣ-Modulated Sub-Harmonic Resonant Switching
Ryota Shinoda, Kazutoshi Tomita, Yuya Hasegawa, Hiroki Ishikuro
Recently, many applications have emerged that use wireless power delivery technology. A new standard “Qi” [1] has been established for battery operated portable devices. The rechargeable battery acts as a power buffer an
Keio University, Yokohama, Japan
ISSCC 2012 Session 17 Medical & Bio
An 8-Channel Scalable EEG Acquisition SoC with Fully Integrated Patient-Specific Seizure Classification and Recording Processor
Jerald Yoo1, Long Yan2, Dina El-Damak3, Muhammad Bin Altaf1,
Institute of Technology, Cambridge, MA 4 Massachusetts General Hospital, Harvard Medical School, Cambridge, MA 5 KAIST, Daejeon, Korea 1 2 Tracking seizure activity to determine proper medication requires a small form fa
Ali Shoeb4, Hoi-Jun Yoo5, Anantha Chandrakasan3 Masdar Institute of Sc
ISSCC 2012 Session 17 Medical & Bio
A 259.6µW Nonlinear HRV-EEG Chaos Processor with Body Channel Communication Interface for Mental Health Monitoring
Taehwan Roh, Sunjoo Hong, Hyunwoo Cho, Hoi-Jun Yoo
Recently, there are many reports on the measurement of mental health conditions as derived from physiological parameters – see references in [1]. Usually, heart-rate or heart rate variability (HRV) has been used for moni
KAIST, Daejeon, Korea
ISSCC 2012 Session 17 Medical & Bio
A Sub-10nA DC-Balanced Adaptive Stimulator IC with Multimodal Sensor for Compact Electro-Acupuncture System
Kiseok Song, Hyungwoo Lee, Sunjoo Hong, Hyunwoo Cho, Hoi-Jun Yoo
stimulation, has been widely used for its effectiveness in pain relief since the 1970s [1] and later for treatment of various diseases such as depression, addiction, and gastrointestinal disorders [2], and non-medical ap
KAIST, Daejeon, Korea Electro-acupuncture (EA), a combination of acupu
ISSCC 2012 Session 17 Medical & Bio
A Batteryless 19µW MICS/ISM-Band Energy Harvesting Body Area Sensor Node SoC
Fan Zhang1, Yanqing Zhang2, Jason Silver1, Yousef Shakhsheer2,
Manohar Nagaraju1, Alicia Klinefelter2, Jagdish Pandey1, James Boley2, Eric Carlson1, Aatmesh Shrivastava2, Brian Otis1, Benton Calhoun2 University of Washington, Seattle, WA University of Virginia, Charlottesville, VA 1
ISSCC 2012 Session 17 Medical & Bio
A 1V 5mA Multimode IEEE 802.15.6/Bluetooth Low-Energy WBAN Transceiver for Biotelemetry Applications loop filter is fully integrated and the synthesizer bandwidth is nominally 130kHz with in-band phase noise of -87dBc/Hz. The complete synthesizer current consumption is 2.5mA from a 1.0V supply.
Alan Wong, Mark Dawkins, Gabriele Devita, Nick Kasparidis,
Andreas Katsiamis, Oliver King, Franco Lauria, Johannes Schiff, Alison Burdett The 2.4GHz transmitter supports digital modulations of rotated π/2-DBPSK and π/4-DQPSK at a 600kHz symbol rate for the IEEE802.15.6 NB PHY dr
ISSCC 2012 Session 17 Medical & Bio
A mm-Sized Wirelessly Powered and Remotely Controlled Locomotive Implantable Device
Anatoly Yakovlev, Daniel Pivonka, Teresa Meng, Ada Poon
Fully autonomous implantable systems with locomotion can revolutionize medical technology, and include applications ranging from diagnostics to minimally invasive surgery. However, the extreme power requirements of fluid
Stanford University, Stanford, CA
ISSCC 2012 Session 17 Medical & Bio
A CMOS Impedance Cytometer for 3D Flowing Single-Cell Real-Time Analysis with ΔΣ Error Correction
Kang-Ho Lee , Jeonghun Nam , Sukhwan Choi , Hyunjung Lim ,
and haematology for the diagnosis and prognosis of disease. It involves the counting, identification and sorting of cells [1,2]. Conventional bulk measurements [3] require a large volume of blood, which is not desirable
Sehyun Shin2, Gyu-Hyeong Cho1 1 1 2 2 1 2 KAIST, Daejeon, Korea Korea
ISSCC 2012 Session 18 Other
Insole Pedometer with Piezoelectric Energy Harvester and 2V Organic Digital and Analog Circuits
Koichi Ishida1, Tsung-Ching Huang1, Kentaro Honda1,
Yasuhiro Shinozuka1, Hiroshi Fuketa1, Tomoyuki Yokota1, Ute Zschieschang2, Hagen Klauk2, Gregory Tortissier1, Tsuyoshi Sekitani1,3, Makoto Takamiya1, Hiroshi Toshiyoshi1, Takao Someya1,3, Takayasu Sakurai1 University of
ISSCC 2012 Session 18 Other
1D and 2D Analog 1.5kHz Air-Stable Organic Capacitive Touch Sensors on Plastic Foil
Hagen Marien1, Michiel Steyaert1, Erik Van Veenendael2,
technologies are rapidly gaining performance and quality. Several prototypes of flexible display devices have been presented and the market breakthrough of such devices is expected shortly. Besides flexible display appli
Paul Heremans1,3 KU Leuven, Heverlee, Belgium Polymer Vision, Eindhove
ISSCC 2012 Session 18 Other
Bidirectional Communication in an HF Hybrid Organic/Solution-Processed Metal-Oxide RFID Tag
Kris Myny1,2, Maarten Rockelé1,2, Adrian Chasin1,2, Duy-Vu Pham3,
Jürgen Steiger3, Silviu Botnaras3, Dennis Weber3, Bernhard Herold4, Jürgen Ficker4, Bas van der Putten5, Gerwin Gelinck5, Jan Genoe1,6, Wim Dehaene1,2, Paul Heremans1,2 imec, Leuven, Belgium KU Leuven, Leuven, Belgium 3
ISSCC 2012 Session 18 Other
A 6b 10MS/s Current-Steering DAC Manufactured with Amorphous Gallium-Indium-Zinc-Oxide TFTs Achieving SFDR > 30dB up to 300kHz
Daniele Raiteri1, Fabrizio Torricelli1, Kris Myny2, Manoj Nag2,
Bas Van der Putten3, Edsger Smits3, Soeren Steudel2, Karin Tempelaars3, Ashutosh Tripathi3, Gerwin Gelinck3, Arthur Van Roermund1, Eugenio Cantatore1 Eindhoven University of Technology, Eindhoven, The Netherlands imec, L
ISSCC 2012 Session 18 Other
A Low-Overhead Self-Healing Embedded System for Ensuring High Yield and Long-Term Sustainability of 60GHz 4Gb/s Radio-on-a-Chip
Adrian Tang1, Frank Hsiao1, David Murphy1, I-Ning Ku1, Jenny Liu1,
Sandeep D’Souza1, Ning-Yi Wang1, Hao Wu1, Yen-Hsiang Wang1, Mandy Tang1, Gabriel Virbila1, Mike Pham1, Derek Yang1, Qun Jane Gu2, Yi-Cheng Wu1, Yen-Cheng Kuan1, Charles Chien3, Mau-Chung Frank Chang1 University of Califo
ISSCC 2012 Session 18 Other
Power-Efficient Readout Circuit for Miniaturized Electronic Nose
Violeta Petrescu, Julia Pettine, Devrez M. Karabacak,
readout circuit forms the necessary ingredients of a new generation of electronic nose (e-nose) devices that, owing to their form factor and power consumption, enable a range of novel applications. Using “application spe
Marianne Vandecasteele, Mercedes Crego Calama, Chris Van Hoof imec - H
ISSCC 2012 Session 18 Other
Towards Ultra-Dense Arrays of VHF NEMS with FDSOI-CMOS Active Pixels for Sensing Applications
Gregory Arndt, Cecilia Dupré, Julien Arcamone, Gérald Cibrario,
progressing from MicroElectroMechanical Systems to NanoElectroMechanical Systems (NEMS). Indeed, NEMS are emerging as a new field of interest because their submicron dimensions make them converge towards CMOS fabrication
Olivier Rozeau, Laurent Duraffourg, Eric Ollier, Eric Colinet CEA-LETI
ISSCC 2012 Session 2 Memory
A 1.2V 30nm 3.2Gb/s/pin 4Gb DDR4 SDRAM with Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme
Kyomin Sohn, Taesik Na, Indal Song, Yong Shim, Wonil Bae,
Sanghee Kang, Dongsu Lee, Hangyun Jung, Hanki Jeoung, Ki-Won Lee, Junsuk Park, Jongeun Lee, Byunghyun Lee, Inwoo Jun, Juseop Park, Junghwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung, Young Choi, Dae-Hee Jung, Jang S
ISSCC 2012 Session 2 Memory
A 1.2V 38nm 2.4Gb/s/pin 2Gb DDR4 SDRAM with Bank Group and ×4 Half-Page Architecture
Kibong Koo, Sunghwa Ok, Yonggu Kang, Seungbong Kim,
Choungki Song, Hyeyoung Lee, Hyungsoo Kim, Yongmi Kim, Jeonghun Lee, Seunghan Oak, Yosep Lee, Jungyu Lee, Joongho Lee, Hyungyu Lee, Jaemin Jang, Jongho Jung, Byeongchan Choi, Yongju Kim, Youngdo Hur, Yunsaing Kim, Byongt
ISSCC 2012 Session 2 Memory
A 1.2V 30nm 1.6Gb/s/pin 4Gb LPDDR3 SDRAM with Input Skew Calibration and Enhanced Control Scheme
Yong-Cheol Bae, Joon-Young Park, Sang Jae Rhee, Seung Bum Ko,
Yonggwon Jeong, Kwang-Sook Noh, Younghoon Son, Jaeyoun Youn, Yonggyu Chu, Hyunyoon Cho, Mijo Kim, Daesik Yim, Hyo-Chang Kim, Sang-Hoon Jung, Hye-In Choi, Sungmin Yim, Jung-Bae Lee, Joo Sun Choi, Kyungseok Oh Samsung Elec
ISSCC 2012 Session 2 Memory
A 20nm 1.8V 8Gb PRAM with 40MB/s Program Bandwidth
Youngdon Choi, Ickhyun Song, Mu-Hui Park, Hoeju Chung,
Sanghoan Chang, Beakhyoung Cho, Jinyoung Kim, Younghoon Oh, Duckmin Kwon, Jung Sunwoo, Junho Shin, Yoohwan Rho, Changsoo Lee, Min Gu Kang, Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaehwan Kim, Yong-Jun Lee, Qi Wang, Sooho C
ISSCC 2012 Session 2 Memory
A 283.2µW 800Mb/s/pin DLL-Based Data Self-Aligner for Through-Silicon Via (TSV) Interface
Hyun-Woo Lee1,2, Soo-Bin Lim1, Junyoung Song1, Ja-Beom Koo1,
Dae-Han Kwon2, Jong-Ho Kang2, Yunsaing Kim2, Young-Jung Choi2, Kunwoo Park2, Byong-Tae Chung2, Chulwoo Kim1 Korea University, Seoul, Korea Hynix Semiconductor, Icheon, Korea 1 2 The process variation among 512 DRAM sampl
ISSCC 2012 Session 2 Memory
An 8Gb/s/pin 4pJ/b/pin Single-T-Line Dual (Base+RF) Band Simultaneous Bidirectional Mobile Memory I/O Interface with Inter-Channel Interference Suppression
Yanghyo Kim1, Gyung-Su Byun2, Adrian Tang1, Chewn-Pu Jou3,
Morgantown, WV 3 TSMC, Hsinchu, Taiwan 1 2 The demand for higher power efficiency and bandwidth is increasing as mobile devices keep enhancing its graphic computing and media processing capabilities. Current memory inter
Hsieh-Hung Hsieh3, Glenn Reinman1, Jason Cong1, Mau-Chung Frank Chang1
ISSCC 2012 Session 2 Memory
A 7Gb/s/Link Non-Contact Memory Module for MultiDrop Bus System Using Energy-Equipartitioned Coupled Transmission Line
Won-Joo Yun, Shinya Nakano, Wataru Mizuhara, Atsutake Kosuge,
increases as well. Recently, the memory interface has been improved up to 20Gb/s/link [1]. Considering PCB routing area, a multi-drop bus architecture is still preferable for large memory capacity to the point-to-point c
Noriyuki Miura, Hiroki Ishikuro, Tadahiro Kuroda Keio University, Yoko
ISSCC 2012 Session 20 RF & Wireless
A 20Mb/s Phase Modulator Based on a 3.6GHz Digital PLL with -36dB EVM at 5mW Power
Giovanni Marzin, Salvatore Levantino, Carlo Samori, Andrea Lacaita
Polar or outphasing radio transmitter architectures promise higher efficiency than their Cartesian counterparts [1], but require the adoption of phase modulators with bandwidth about one order of magnitude wider than the
Politecnico di Milano, Milan, Italy
ISSCC 2012 Session 20 RF & Wireless
A 14.2mW 2.55-to-3GHz Cascaded PLL with
Reference Injection, 800MHz Delta-Sigma Modulator, and 255fsrms Integrated Jitter in 0.13µm CMOS
However, their phase noise performance is typically worse than the integer-N [4, 5, 6] counterpart due to the quantization noise of the delta-sigma modulator (DSM). In this paper, we propose a low-noise fractional-N PLL
Dongmin Park, SeongHwan Cho KAIST, Daejeon, Korea Fractional-N PLLs [1
ISSCC 2012 Session 20 RF & Wireless
A 40nm CMOS All-Digital Fractional-N Synthesizer without Requiring Calibration Frank Opteynde
Audax-Technologies, Leuven, Belgium
Bang-Bang all-digital PLLs [1] for applications such as digital clock multiplication have existed for a long time, but show limited phase noise performance. Pioneering recent work [2-5] has demonstrated frequency synthes
ISSCC 2012 Session 20 RF & Wireless
A 36mW/9mW Power-Scalable DCO in 55nm CMOS for GSM/WCDMA Frequency Synthesizers
Antonio Liscidini1, Luca Fanori1, Pietro Andreani2, Rinaldo Castello1
Lund University, Lund, Sweden 1 2 The RF front-ends of modern smart phones are becoming more complicated as newer standards are introduced (e.g. LTE). Reconfigurability can be used to reduce their size, provided that pow
University of Pavia, Pavia, Italy
ISSCC 2012 Session 20 RF & Wireless
A Clip-and-Restore Technique for Phase Desensitization in a 1.2V 65nm CMOS Oscillator for Cellular Mobile and Base Stations
Akshay Visweswaran, R. Bogdan Staszewski, John R. Long
Base-station (BTS) RX oscillator phase noise requirements between 600kHz and 3MHz are difficult to satisfy using a fully monolithic VCO fabricated in bulkCMOS technology. The GSM-900-BTS and the DCS-1800-BTS RX specifica
Delft University of Technology, Delft, The Netherlands
ISSCC 2012 Session 20 RF & Wireless
A 32nm CMOS All-Digital Reconfigurable Fractional Frequency Divider for LO Generation in Multistandard SoC Radios With On-the-Fly Interference Management
Kailash Chandrashekar, Stefano Pellerano, Paolo Madoglio,
sensitive to interference from other radio circuitry (e.g. on-chip PA), components of the SoC system (e.g. clocks and their harmonics) and nearby radios. To prevent VCO pulling by the PA, fractional dividers can be used
Ashoke Ravi, Yorgos Palaskas Intel, Hillsboro, OR A VCO used in a PLL
ISSCC 2012 Session 20 RF & Wireless
A 6.7-to-9.2GHz 55nm CMOS Hybrid Class-B/Class-C Cellular TX VCO
Luca Fanori1,2, Antonio Liscidini1, Pietro Andreani2,3
Lund University, Lund, Sweden 3 ST-Ericsson, Lund, Sweden 1 2 The design of very-wide-band CMOS voltage-controlled oscillators (VCOs) compliant with the phase-noise specifications of cellular transmitters is non-trivial,
University of Pavia, Pavia, Italy
ISSCC 2012 Session 21 Analog Circuits
A 0.3-to-1.2GHz Tunable 4th-Order Switched gm-C Bandpass Filter with >55dB Ultimate Rejection and Out-of-Band IIP3 of +29dBm
Milad Darvishi, Ronan Van der Zee, Eric Klumperink, Bram Nauta
The trend towards reconfigurable receivers requires on-chip flexible filters that can replace dedicated, bulky and non-tunable filters (e.g., SAW and BAW [1]). Although BAW filters are compatible with silicon processes,
University of Twente, Enschede, The Netherlands
ISSCC 2012 Session 21 Analog Circuits
A 60V Capacitive Gain 27nV/√Hz 137dB CMRR PGA with ±10V Inputs
Christian Birk1, Gerard Mora-Puchalt2
Analog Devices, Valencia, Spain 1 2 This paper describes the implementation of a 60V programmable-gain amplifier (PGA) with ±10V differential input range and a 5V output compatible with many commercially available ADCs.
Analog Devices, Cork, Ireland
ISSCC 2012 Session 21 Analog Circuits
A 0.55V 61dB-SNR 67dB-SFDR 7MHz 4th-Order Butterworth Filter Using Ring-Oscillator-Based Integrators in 90nm CMOS
Brian Drost1,2, Mrunmay Talegaonkar2, Pavan Kumar Hanumolu2
Oregon State University, Corvallis, OR 1 2 Integrators are key building blocks in many analog signal processing circuits and systems. They are typically implemented using either an opamp-RC or a Gm-C architecture dependi
Silicon Laboratories, Corvallis, OR
ISSCC 2012 Session 21 Analog Circuits
A 65nm CMOS 1-to-10GHz Tunable ContinuousTime Low-pass Filter for High-Data-Rate Communications
Fawzi Houfaf1,2,3, Mathieu Egot1, Andreas Kaiser2, Andreia Cathelin1, Bram Nauta3
filters are in the frequency band of 1 to 3GHz [2,4-6], targeting applications like UWB communications or hard disk drives. Nevertheless, bands much higher, of about 10GHz, are to be addressed in the near future. This pa
STMicroelectronics, Crolles, France IEMN / ISEN, Lille, France 3 Unive
ISSCC 2012 Session 21 Analog Circuits
A 0.0025mm2 Bandgap Voltage Reference for 1.1V Supply in Standard 0.16µm CMOS Tmin= -100°C and results in VREF ≅ 900mV. In our design we did some extra optimization in the length ratios and width ratios of the transistors to get maximum curvature correction. The designed circuit occupies 50×50µm2 in a standard 0.16µm bulk CMOS technology. Measurements are done on a Süss Microtec PM200 wafer prober with cooling, using a Keithley 4200 analyzer.
Anne-Johan Annema1, George Goksun2
Anagear, Rosmalen, The Netherlands 1 2 Todays ICs usually employ one bandgap voltage reference (BGVR) circuit to generate a well defined voltage that is reused at many places in that IC. The classical BGVR generates a re
University of Twente, Enschede, The Netherlands
ISSCC 2012 Session 21 Analog Circuits
A 5.58nW 32.768kHz DLL-Assisted XO for Real-Time Clocks in Wireless Sensing Applications
Dongmin Yoon, Dennis Sylvester, David Blaauw
There is a growing interest in ultra-low-power wireless microsystems [1]. Synchronization between different nodes in a wireless sensor network plays an important role in the overall node energy budget due to the high pow
University of Michigan, Ann Arbor, MI
ISSCC 2012 Session 21 Analog Circuits
A 0.016mm2 144µW Three-Stage Amplifier Capable of Driving 1-to-15nF Capacitive Load with >0.95MHz GBW
Zushu Yan1, Pui-In Mak1, Man-Kay Law1, Rui Martins1,2
Instituto Superior Tecnico, Lisbon, Portugal 1 2 High-color-depth LCD drivers require nF-range capacitors as the charge reservoirs to handle the glitch energy during the conversion of the DAC [1]. The reference buffers b
University of Macau, Macau, China
ISSCC 2012 Session 21 Analog Circuits
A 90Vpp 720MHz GBW Linear Power Amplifier for Ultrasound Imaging Transmitters in BCD6-SOI
Dario Bianchi1, Fabio Quaglia2, Andrea Mazzanti1, Francesco Svelto1
Transducer drivers for ultrasound imaging are required to have high output power and operation frequency into the MHz range. Furthermore, in harmonic imaging, a well-established method resulting in enhanced contrast, hig
University of Pavia, Pavia, Italy, 2STMicroelectronics, Cornaredo, Ita
ISSCC 2012 Session 21 Analog Circuits
On-Chip Gain Reconfigurable 1.2V 24µW Chopping Instrumentation Amplifier with Automatic Resistor Matching in 0.13µm CMOS
Fridolin Michel, Michiel Steyaert
Motivated by low-voltage, low-power and small-size requirements of biomedical and energy scavenging circuits, this work introduces a fully integrated instrumentation amplifier (IA) running at 1.2V with a power consumptio
KU Leuven, Leuven, Belgium
ISSCC 2012 Session 21 Analog Circuits
A Capacitively Coupled Chopper Instrumentation
Amplifier with a ±30V Common-Mode Range, 160dB, CMRR and 5µV Offset
(CCIA) for current-sensing applications. A capacitively driven input chopper enables a ±30V input common-mode (CM) range and an input offset less than 5µV. The CCIA does not draw supply current from its input terminals o
Qinwen Fan, Johan Huijsing, Kofi Makinwa Delft University of Technolog
ISSCC 2012 Session 22 Image Sensors
An 83dB-Dynamic-Range Single-Exposure Global-Shutter CMOS Image Sensor with In-Pixel Dual Storage make the photon-shot signal the dominant noise, the sum of CDS-readout and DRS-readout signals is used.
Masaki Sakakibara , Yusuke Oike , Takafumi Takatsuka , Akihiko Kato ,
Katsumi Honda1, Tadayuki Taura1, Takashi Machida1, Jun Okuno2, Atsuhiro Ando2, Taketo Fukuro2, Tomohiko Asatsuma1, Suzunori Endo2, Junpei Yamamoto2, Yasuhiro Nakano2, Takumi Kaneshige2, Ikuhiro Yamamura1, Takayuki Ezaki1
ISSCC 2012 Session 22 Image Sensors
A Global-Shutter CMOS Image Sensor with Readout Speed of 1Tpixel/s Burst and 780Mpixel/s Continuous
Yasuhisa Tochigi1, Katsuhiko Hanzawa1, Yuri Kato1, Rihito Kuroda1,
Hideki Mutoh2, Ryuta Hirose3, Hideki Tominaga3, Kenji Takubo3, Yasushi Kondo3, Shigetoshi Sugawa1 Tohoku University, Sendai, Japan Link Research, Odawara, Japan 3 Shimadzu, Kyoto, Japan 1 2 Researchers in many advanced R
ISSCC 2012 Session 22 Image Sensors
A 0.7e-rms-Temporal-Readout-Noise CMOS Image Sensor for Low-Light-Level Imaging
Yue Chen1, Yang Xu1, Youngcheol Chae1, Adri Mierop2, Xinyang Wang3,
Belgium 4 Harvest Imaging, Bree, Belgium 1 2 For low-light-level imaging, the performance of a CMOS image sensor (CIS) is usually limited by the temporal readout noise (TRN) generated from its analog readout circuit chai
Albert Theuwissen1,4 Delft University of Technology, Delft, The Nether
ISSCC 2012 Session 22 Image Sensors
A 256×256 CMOS Image Sensor with ΔΣ-Based Single-Shot Compressed Sensing
Yusuke Oike1,2, Abbas El Gamal1
Sony, Atsugi, Japan 1 2 Low power consumption is a primary concern in many CMOS image-sensor applications. As the resolution of these sensors has increased while maintaining or increasing their frame rates, A/D conversio
Stanford University, Stanford, CA
ISSCC 2012 Session 22 Image Sensors
A 33Mpixel 120fps CMOS Image Sensor Using 12b Column-Parallel Pipelined Cyclic ADCs
Toshihisa Watabe1, Kazuya Kitamura1, Takehide Sawamoto2,
Tomohiko Kosugi3, Tomoyuki Akahori3, Tetsuya Iida3, Keigo Isobe3, Takashi Watanabe3, Hiroshi Shimamoto1, Hiroshi Ohtake1, Satoshi Aoyama3, Shoji Kawahito2,3, Norifumi Egami1 NHK Science & Technology Research Laboratories
ISSCC 2012 Session 22 Image Sensors
A 14b Extended Counting ADC Implemented in a 24MPixel APS-C CMOS Image Sensor
Jae-hong Kim, Wun-ki Jung, Seung-hyun Lim, Yu-jin Park,
Won-ho Choi, Yun-jung Kim, Chang-eun Kang, Ji-hun Shin, Kyo-jin Choo, Won-baek Lee, Jin-kyeong Heo, Byung-jo Kim, Se-jun Kim, Min-ho Kwon, Kwi-sung Yoo, Jin-ho Seo, Seog-heon Ham, Chi-young Choi, Gab-soo Han Samsung Elec
ISSCC 2012 Session 22 Image Sensors
A 1.5Mpixel RGBZ CMOS Image Sensor for Simultaneous Color and Range Image Capture
Wonjoo Kim1, Wang Yibing2, Ilia Ovsiannikov2, SeungHoon Lee1,
implementation and performance of relatively small Z pixels (2.25×9.0µm2). Work to date has focused on the Z pixels since the color pixels have commercial product heritage. Generally, smaller pixels collect fewer signal
Yoondong Park1, Chilhee Chung1, Eric Fossum1,2 Samsung Electronics, Hw
ISSCC 2012 Session 22 Image Sensors
A QVGA-Range Image Sensor Based on BuriedChannel Demodulator Pixels in 0.18µm CMOS with Extended Dynamic Range
Lucio Pancheri, Nicola Massari, Matteo Perenzoni, Mattia Malfatti, David Stoppa
mainly in the entertainment segment, with products based on pattern-projection techniques. Although this technology has shown remarkable performance in terms of cost, measurement accuracy and power consumption, there is
Fondazione Bruno Kessler, Trento, Italy 3D vision systems have recentl
ISSCC 2012 Session 22 Image Sensors
A 1920×1080 3.65µm-Pixel 2D/3D Image Sensor with Split and Binning Pixel Structure in 0.11µm Standard CMOS
Seong-Jin Kim, Byongmin Kang, James D. K. Kim, Keechang Lee,
very crucial in various applications such as robotics, automotive, augmented reality, and interactive gaming, because it enables electronic devices to recognize and track target objects without complicated post-processin
Chang-Yeong Kim, Kinam Kim Samsung Advanced Institute of Technology, Y