ISSCC 2018

2018

205 篇论文 · Wireless (27) · RF & Wireless (23) · Wireline I/O (18) · AI / ML (17)

ISSCC 2018 Session 17 Digital Processors
A 0.28mΩ-Sensitivity 105dB-Dynamic-Range Electrochemical Impedance Spectroscopy SoC for Electrochemical Gas Detection
Guangyang Qu1, Hanqing Wang1, Yimiao Zhao1, John O'Donnell2,
Colin Lyden3, Yincai Liu1, Junbiao Ding4, Dennis Dempsey2, Leicheng Chen1, Donal Bourke3, Shurong Gu1, Jun Gao1, Lizhu Lu1, Li Wang1, Xuemin Li1, Hongxing Li5, Chao Chu1, Ling Yang1 Analog Devices, Beijing, China; 2Analo
ISSCC 2018 Session 17 Digital Processors
50nW 5kHz-BW Opamp-Less ΔΣ Impedance Analyzer for Brain Neurochemistry Monitoring
Maged El Ansary1, Nima Soltani1, Hossein Kassiri1, Ruben Machado1,
Suzie Dufou1,2, Peter L. Carlen1,2, Michael Thompson1, Roman Genov1 University of Toronto, Toronto, Canada Toronto Western Hospital, Toronto, Canada 1 2 Potassium (K+) and sodium (Na+) ions are the main signal carriers i
ISSCC 2018 Session 17 Digital Processors
A 200Mb/s Inductively Coupled Wireless Transcranial Transceiver Achieving 5e-11 BER and 1.5pJ/b Transmit Energy Efficiency
Wen Li1, Yida Duan2, Jan M. Rabaey1
Inphi, Santa Clara, CA 1 2 Recent advancements in medical neural science and brain research have enabled the potential of uninterrupted simultaneous recording of thousands of neurons. To minimize the risk of infection to
ISSCC 2018 Session 17 Digital Processors
A 330μm×90μm Opto-Electronically Integrated Wireless System-on-Chip for Recording of Neural Activities
Sunwoo Lee, Alejandro J. Cortese, Paige Trexel, Elizabeth R. Agger,
Paul L. McEuen, Alyosha C. Molnar Cornell University, Ithaca, NY Recording neural activity in live animals in vivo poses several challenges. Electrical techniques typically require electrodes to be tethered to the outsid
ISSCC 2018 Session 17 Digital Processors
A 665μW Silicon Photomultiplier-Based NIRS/EEG/EIT Monitoring ASIC for Wearable Functional Brain Imaging
Jiawei Xu1, Mario Konijnenburg1, Budi Lukita1, Shuang Song2,
Hyunsoo Ha1, Roland van Wegberg1, Erfan Sheikhi1, Massimo Mazzillo3, Giorgio Fallica3, Walter De Raedt2, Chris Van Hoof2,4, Nick Van Helleputte2 imec - Holst Centre, Eindhoven, The Netherlands; 2imec, Leuven, Belgium 3 S
ISSCC 2018 Session 17 Digital Processors
A Recursive-Memory Brain-State Classifier with 32-Channel Track-and-Zoom Δ2Σ ADCs and Charge-Balanced Programmable Waveform Neurostimulators
Gerard O'Leary1, M. Reza Pazhouhandeh1, Michael Chang1,
David Groppe2, Taufik A. Valiante3, Naveen Verma4, Roman Genov1 University of Toronto, Toronto, Canada Krembil Neuroscience Center, Toronto, Canada 3 Toronto Western Hospital, Toronto, Canada 4 Princeton University, Prin
ISSCC 2018 Session 18 Digital Circuits
Droop Mitigation Using Critical-Path Sensors and an On-Chip Distributed Power Supply Estimation Engine in the z14TM Enterprise Processor
Christos Vezyrtzis1, Thomas Strach2, Pierce I-Jen Chuang1,
Preetham Lobo3, Richard Rizzolo4, Tobias Webel2, Pawel Owczarczyk4, Alper Buyuktosunoglu1, Ramon Bertran1, David Hui4, Susan M. Eickhoff4, Michael Floyd5, Gerard Salem6, Sean Carey4, Stelios G. Tsapepas4, Phillip J. Rest
ISSCC 2018 Session 18 Digital Circuits
A Combined All-Digital PLL-Buck Slack Regulation System with Autonomous CCM/DCM Transition Control and 82% Average Voltage-Margin Reduction in a 0.6-to-1.0V Cortex-M0 Processor
Xun Sun, Sung Kim, Fahim ur Rahman, Venkata Rajesh Pamula, Xi Li,
Naveen John, Visvesh S. Sathe University of Washington, Seattle, WA Integrated Voltage Regulation (IVR) using buck converters enables efficient, finegrained supply-voltage control in modern SoC domains [1]. However, exis
ISSCC 2018 Session 18 Digital Circuits
A 2.5µW 0.0067mm2 Automatic Back-Biasing Compensation Unit Achieving 50% Leakage Reduction in FDSOI 28nm over 0.35-to-1V VDD Range
Anthony Quelen1, Gael Pillonnet1, Philippe Flatresse2, Edith Beigné1
STMicroelectronics, Crolles, France 1 2 Worst-case design and post-silicon tuning are well established digital design practices reducing timing violations in presence of process, temperature, aging and voltage variations
ISSCC 2018 Session 18 Digital Circuits
A 0.4V 430nA Quiescent Current NMOS Digital LDO with NAND-Based Analog-Assisted Loop in 28nm CMOS
Xiaofei Ma1,2, Yan Lu1, Rui P. Martins1,3, Qiang Li2
University of Electronic Science and Technology of China, Chengdu, China 3 Instituto Superior Tecnico/University of Lisboa, Lisbon, Portugal the number of registers. The fine loop contains an 8b SR, controlling eight 1×s
ISSCC 2018 Session 18 Digital Circuits
A Fully Integrated 40pF Output Capacitor BeatFrequency-Quantizer-Based Digital LDO with Built-In Adaptive Sampling and Active Voltage Positioning
Somnath Kundu1, Muqing Liu1, Richard Wong2, Shi-Jie Wen2, Chris H. Kim1
University of Minnesota, Minneapolis, MN Cisco Systems, San Jose, CA 1 2 Integrated voltage regulators with a wide output current/voltage dynamic range are required to support fast dynamic voltage and frequency scaling (
ISSCC 2018 Session 18 Digital Circuits
A 500mA Analog-Assisted Digital-LDO-Based On-Chip Distributed Power Delivery Grid with Cooperative Regulation and IR-Drop Reduction in 65nm CMOS
Yasu Lu1, Fan Yang2, Feng Chen1, Philip K. T. Mok1
Qualcomm, Singapore 1 2 With the die area of modern processors growing larger and larger, the IR drop across the power supply rail due to its parasitic resistance becomes considerable. There is an urgent demand for local
ISSCC 2018 Session 18 Digital Circuits
A Sub-1.55mV-Accuracy 36.9ps-FOM Digital-LowDropout Regulator Employing Switched-Capacitor Resistance
Loai G. Salem, Patrick P. Mercier
Modern DVFS-enabled SoCs require nimble supply regulators that rapidly respond to abrupt load changes and offer fine resolution (e.g., 12.5mV in [1], 10mV in
ISSCC 2018 Session 18 Digital Circuits
A High-Efficiency and Fast-Transient Digital-LowDropout Regulator with the Burst Mode Corresponding to the Power-Saving Modes of DC-DC Switching Converters
Jian-He Lin1, Yu-Sheng Ma1, Chia-Ming Huang1, Li-Chi Lin1,
switching-frequency select signal FSEL[1:0]. Initially, the NLSC speeds up the switching frequency, where QBST[6:0] decreases by 1 every 2/3×T1 (=TR/(QN(MAX)-QN(MIN)) time periods. At the end, it slows down the clock fre
ISSCC 2018 Session 19 RF & Wireless
An 8b Subthreshold Hybrid Thermal Sensor with ±1.07°C Inaccuracy and Single-Element Remote-Sensing Technique in 22nm FinFET
Cho-Ying Lu1, Surej Ravikumar1, Amruta D. Sali1, Matthias Eberlein2, Hyung-Jin Lee1
(SoC) to provide information about die temperature for thermal protection or performance optimization. To enable the deployment of multiple sensors in an SoC, the power and size of such sensors has been steadily reduced.
ISSCC 2018 Session 19 RF & Wireless
A 0.25mm2 Resistor-Based Temperature Sensor with an Inaccuracy of 0.12°C (3σ) from -55°C to 125°C and a Resolution FOM of 32fJ∙K2
Sining Pan, Kofi A. A. Makinwa
Temperature sensors based on Wheatstone bridges, e.g. [1,2], have recently achieved higher resolution and greater energy efficiency than conventional BJTbased sensors [3]. However, this comes at the expense of area, maki
ISSCC 2018 Session 19 RF & Wireless
A 0.53pJ∙K2 7000μm2 Resistor-Based Temperature Sensor with an Inaccuracy of ±0.35°C (3σ) in 65nm CMOS
Woojun Choi1, Yong-Tae Lee1, Seonhong Kim2, Sanghoon Lee2,
Jieun Jang2, Junhyun Chun2, Kofi A. A. Makinwa3, Youngcheol Chae1 Yonsei University, Seoul, Korea; 2SK hynix, Icheon, Korea Delft University of Technology, Delft, The Netherlands 1 3 In microprocessors and DRAMs, on-chip
ISSCC 2018 Session 19 RF & Wireless
A ±4A High-Side Current Sensor with 25V Input CM Range and 0.9% Gain Error from -40°C to 85°C Using an Analog Temperature Compensation Technique
Long Xu, Johan H. Huijsing, Kofi A. A. Makinwa
This paper presents a fully integrated ±4A current sensor that supports a 25V input common-mode voltage range (CMVR) while operating from a single 1.5V supply. It consists of an on-chip metal shunt, a beyond-the-rails AD
ISSCC 2018 Session 19 RF & Wireless
A Current-Measurement Front-End with 160dB Dynamic Range and 7ppm INL
Chung-Lun Hsu, Drew A. Hall
Accurate current measurement is crucial in many biosensing applications, such as the detection of neurotransmitters [1] and the monitoring of intercellular molecular dynamics. This need has become even more critical rece
ISSCC 2018 Session 19 RF & Wireless
A 2.5nJ Duty-Cycled Bridge-to-Digital Converter Integrated in a 13mm3 Pressure-Sensing System
Sechang Oh1, Yao Shi1, Gyouho Kim1,2, Yejoong Kim1,2, Taewook Kang1,
piezoresistive MEMS sensors, often configured in a Wheatstone bridge, are widely used to measure physical signals such as pressure [1-3], temperature [4], force [1], and gas concentration. A common method to realize a di
ISSCC 2018 Session 19 RF & Wireless
A 21.8b Sub-100μHz 1/f Corner 2.4μV-Offset Programmable-Gain Read-Out IC for Bridge Measurement Systems
Jaehoon Jun, Cyuyeol Rhee, Minsung Kim, Junho Kang, Suhwan Kim
High-resolution read-out integrated circuits (ROICs) are often used in DC measurement systems such as bridge transducers. Since these typically output small-amplitude signals with a bandwidth of a few hertz, a highly lin
ISSCC 2018 Session 19 RF & Wireless
A Phase-Domain Readout Circuit for a CMOSCompatible Thermal-Conductivity-Based Carbon Dioxide Sensor
Zeyu Cai1,2, Robert van Veldhoven2, Hilco Suy3, Ger de Graaf1,
Kofi A. A. Makinwa1, Michiel Pertijs1 Delft University of Technology, Delft, The Netherlands NXP Semiconductors, Eindhoven, The Netherlands 3 ams AG, Eindhoven, The Netherlands 1 2 The measurement of carbon-dioxide (CO2)
ISSCC 2018 Session 2 Digital Processors
SkyLake-SP: A 14nm 28-Core Xeon® Processor
Simon M. Tam, Harry Muljono, Min Huang, Sitaraman Iyer,
Kalapi Royneogi, Nagmohan Satti, Rizwan Qureshi, Wei Chen, Tom Wang, Hubert Hsieh, Sujal Vora, Eddie Wang Intel, Santa Clara, CA SkyLake-SP (Scalable Performance), code name SKX, is the next generation Xeon® server proce
ISSCC 2018 Session 2 Digital Processors
IBM z14TM: 14nm Microprocessor for the Next-Generation Mainframe
Christopher Berry1, James Warnock2, John Isakson3, John Badar3,
Brian Bell4, Frank Malgioglio1, Guenter Mayer5, Dina Hamid1, Jesse Surprise1, David Wolpert1, Ofer Geva6, Bill Huott1, Leon Sigal2, Sean Carey1, Richard Rizzolo1, Ricardo Nigaglioni3, Mark Cichanowski3, Dureseti Chidamba
ISSCC 2018 Session 2 Digital Processors
An Energy-Efficient Graphics Processor Featuring
Fine-Grain DVFS with Integrated Voltage Regulators,
Execution-Unit Turbo, and Retentive Sleep in 14nm Tri-Gate CMOS Pascal Meinerzhagen1, Carlos Tokunaga1, Andres Malavasi1, Vaibhav Vaidya1, Ashwin Mendon1, Deepak Mathaikutty1, Jaydeep Kulkarni1, Charles Augustine1, Minki
ISSCC 2018 Session 2 Digital Processors
"Zeppelin": An SoC for Multichip Architectures
Noah Beck1, Sean White1, Milam Paraschou2, Samuel Naffziger2
AMD, Fort Collins, CO 1 2 Codenamed “Zeppelin”, AMD’s next-generation System-on-a-Chip (SoC) was designed for use in multiple products and packages in multiple markets, including server, mainstream PC desktop, and high-e
ISSCC 2018 Session 2 Digital Processors
An Energy-Efficient Reconfigurable DTLS Cryptographic Engine for End-to-End Security in IoT Applications
Utsav Banerjee, Chiraag Juvekar, Andrew Wright, Arvind, Anantha P. Chandrakasan
Layer Security (DTLS)
ISSCC 2018 Session 2 Digital Processors
A 595pW 14pJ/Cycle Microcontroller with Dual-Mode Standard Cells and Self-Startup for Battery-Indifferent Distributed Sensing
Longyang Lin, Saurabh Jain, Massimo Alioto
Battery-indifferent sensor nodes require continuous operation in spite of the intermittently available battery energy, and hence require low peak-power operation to fit the fluctuating power made available by the harvest
ISSCC 2018 Session 2 Digital Processors
A cm-Scale Self-Powered Intelligent and Secure IoT Edge Mote Featuring an Ultra-Low-Power SoC in 14nm Tri-Gate CMOS
Tanay Karnik1, Dileep Kurian2, Paolo Aseron1, Richard Dorrance1,
Erkan Alpman1, Angela Nicoara1, Roman Popov1, Leonid Azarenkov1, Mikhail Moiseev1, Li Zhao1, Santosh Ghosh1, Rafael Misoczki1, Ankit Gupta2, Akhila M2, Sriram Muthukumar2, Saurabh Bhandari2, Yada Satish2, Kartik Jain2, R
ISSCC 2018 Session 20 Memory
A 512Gb 3b/Cell 3D Flash Memory on a 96-Word-Line-Layer Technology
Hiroshi Maejima1, Kazushige Kanda1, Susumu Fujimura1,
Teruo Takagiwa1, Susumu Ozawa1, Jumpei Sato1, Yoshihiko Shindo1, Manabu Sato1, Naoaki Kanagawa1, Junji Musha1, Satoshi Inoue1, Katsuaki Sakurai1, Naohito Morozumi1, Ryo Fukuda1, Yuui Shimizu1, Toshifumi Hashimoto1, Xu Li
ISSCC 2018 Session 20 Memory
A Flash Memory Controller for 15μs Ultra-Low-Latency SSD Using High-Speed 3D NAND Flash with 3μs Read Time
Wooseong Cheong, Chanho Yoon, Seonghoon Woo, Kyuwook Han,
Daehyun Kim, Chulseung Lee, Youra Choi, Shine Kim, Dongku Kang, Geunyeong Yu, Jaehong Kim, Jaechun Park, Ki-Whan Song, Ki-Tae Park, Sangyeun Cho, Hwaseok Oh, Daniel DG Lee, Jin-Hyeok Choi, Jaeheon Jeong Samsung Electroni
ISSCC 2018 Session 20 Memory
A 1Tb 4b/Cell 64-Stacked-WL 3D NAND Flash Memory with 12MB/s Program Throughput
Seungjae Lee, Chulbum Kim, Minsu Kim, Sung-min Joe, Joonsuc Jang,
Seungbum Kim, Kangbin Lee, Jisu Kim, Jiyoon Park, Han-Jun Lee, Minseok Kim, Seonyong Lee, SeonGeon Lee, Jinbae Bang, Dongjin Shin, Hwajun Jang, Deokwoo Lee, Nahyun Kim, Jonghoo Jo, Jonghoon Park, Sohyun Park, Youngsik Rh
ISSCC 2018 Session 21 Other
Mixed-Signal Programmable Non-Linear Interface for Resource-Efficient Multi-Sensor Analytics
Komail Badami, Juan-Carlos Pena Ramos, Steven Lauwereins, Marian Verhelst
many portable always-awake and multi-sensor systems, the power consumption is dominated by digital backend processing [1] for feature-computation and classification. Recent Analog-to-Information based innovations (see Fi
ISSCC 2018 Session 21 AI / ML
A 1μW Voice Activity Detector Using Analog Feature Extraction and Digital Deep Neural Network
Minhao Yang, Chung-Heng Yeh, Yiyin Zhou, Joao P. Cerqueira,
Aurel A. Lazar, Mingoo Seok Columbia University, New York, NY Voice user interfaces (UIs) are highly compelling for wearable and mobile devices. They have the advantage of using compact and ultra-low-power (ULP) input de
ISSCC 2018 Session 21 Other
32GHz Resonant-Fin Transistors in 14nm FinFET Technology
Bichoy Bahr1, Yanbo He2, Zoran Krivokapic3, Srinivasa Banna3, Dana Weinstein2
of microelectromechanical resonators in IC technology has been explored extensively over the past few decades in the effort to achieve onchip clocks, RF filters, and physical, chemical, and biological sensors. Various ap
ISSCC 2018 Session 21 Other
A 10Gb/s Si-Photonic Transceiver with 150μW 120μs-Lock-Time Digitally Supervised Analog Microring Wavelength Stabilization for 1Tb/s/mm2 Die-to-Die Optical Networks
Yvain Thonnart1, Mounir Zid1, José Luis Gonzalez-Jimenez1,
Guillaume Waltener1, Robert Polster1, Olivier Dubray1, Florent Lepin1, Stéphane Bernabé1, Sylvie Menezo1, Gabriel Parès1, Olivier Castany1, Laura Boutafa1, Philippe Grosse1, Benoît Charbonnier1, Charles Baudot2 CEA-LETI-
ISSCC 2018 Session 21 Other
A 286F2/Cell Distributed Bulk-Current Sensor and Secure Flush Code Eraser Against Laser Fault Injection Attack
Kohei Matsuda1, Tatsuya Fujii2, Natsu Shoji2, Takeshi Sugawara2,
and Technology, Ikoma, Japan 1 2 A sense-and-react closed-loop countermeasure is proposed against Laser Fault Injection (LFI) attack on a cryptographic processor core. A 286F2/cell distributed bulk-current sensor detects
ISSCC 2018 Session 21 Other
An 8-Channel 13GHz ESR-on-a-Chip Injection-locked VCO-array achieving 200μM-Concentration Sensitivity
Anh Chu1,3, Benedikt Schlecker1,3, Klaus Lips2, Maurits Ortmanns1,
University of Stuttgart, Stuttgart, Germany 1 2 Thanks to their unmatched specificity, methods based on magnetic resonance effects are amongst the most powerful spectroscopic techniques available today. Out of these meth
ISSCC 2018 Session 22 Data Converters
A 24-to-72GS/s 8b Time-Interleaved SAR ADC with 2.0-to-3.3pJ/conversion and >30dB SNDR at Nyquist in 14nm CMOS FinFET
Lukas Kull1, Danny Luu1,2, Christian Menolfi1, Matthias Braendli1,
Alessandro Cevrero1, Ilter Ozkaya1,3, Thomas Toifl1 IBM Zurich Research Laboratory, Rueschlikon, Switzerland ETH Zurich, Zurich, Switzerland; 3EPFL, Lausanne, Switzerland 1 2 Optical communication standards, such as ITU
ISSCC 2018 Session 22 Data Converters
A 16b 6GS/s Nyquist DAC with IMD <-90dBc up to 1.9GHz in 16nm CMOS
Chi-Hung Lin, Koon Lun Jackie Wong, Tae-Youn Kim, Guangxi Ray Xie,
over a wide bandwidth while consuming low power and small area [1] - [6]. In this work, a 16b 6GS/s Nyquist current-steering DAC in 16nm CMOS is presented. Utilizing bounded INL calibration and thermometer DEM to tackle
ISSCC 2018 Session 22 Data Converters
A 16b 12GS/s Single/Dual-Rate DAC with Successive Bandpass Delta-Sigma Modulator Achieving <-67dBc IM3 Within DC-to-6GHz Tunable Passbands
Shiyu Su, Mike Shuo-Wei Chen
The agile allocation of signal bands over RF frequencies and high in-band spectral purity (both SFDR and NSD) can enable higher-order modulation in highthroughput flexible wireless/wireline transmitters, where signals ar
ISSCC 2018 Session 23 Other
A -31dBc Integrated-Phase-Noise 29GHz Fractional-N Frequency Synthesizer Supporting Multiple Frequency Bands for Backward-Compatible 5G Using a Frequency Doubler and Injection-Locked Frequency Multipliers
Heein Yoon1, Juyeop Kim1, Suneui Park1, Younghyun Lim1,
high-bandwidth mobile communications, 5G technology is targeted to support data-rates up to 10Gb/s. To reach this goal, one of challenging tasks for wireless transceivers is to generate millimeter-wave (mmW) band LO sign
ISSCC 2018 Session 23 Other
A 22.8-to-43.2GHz Tuning-Less Injection-Locked Frequency Tripler Using Injection-Current Boosting with 76.4% Locking Range for Multiband 5G Applications
Jingzhi Zhang, Huihua Liu, Chenxi Zhao, Kai Kang
Future cross-network and international roaming are attractive in mm-wave fifthgeneration (5G) wireless networks with multiband operations. The generation of an ultra-wide-bandwidth ultra-low-phase-noise (PN) local oscill
ISSCC 2018 Session 23 Other
A 301.7-to-331.8GHz Source with Entirely On-Chip Feedback Loop for Frequency Stabilization in 0.13μm BiCMOS
Chen Jiang1,2, Mohammed Aseeri3, Andreia Cathelin4, Ehsan Afshari1
King Abdulaziz City for Science and Technology, Riyadh, Saudi Arabia, 4 STMicroelectronics, Crolles, France 1 3 The THz band has shown its unique characteristics and great potential in many applications. Harmonic oscilla
ISSCC 2018 Session 23 Other
An Inverse-Class-F CMOS VCO with Intrinsic-High-Q 1st- and 2nd-Harmonic Resonances for 1/f2-to-1/f3 Phase-Noise Suppression Achieving 196.2dBc/Hz FOM
Chee-Cheow Lim1,2, Jun Yin1, Pui-In Mak1, Harikrishnan Ramiah2,
Rui P. Martins1,3 University of Macau, Macau, China University of Malaya, Kuala Lumpur, Malaysia 3 Instituto Superior Tecnico/University of Lisboa, Lisbon, Portugal 1 2 Second-harmonic common-mode (CM) resonance has been
ISSCC 2018 Session 23 Other
A Quad-Core 15GHz BiCMOS VCO with -124dBc/Hz
Phase Noise at 1MHz Offset, -189dBc/Hz FOM, and, Robust to Multimode Concurrent Oscillations
Fabio Padovan1, Fabio Quadrelli1,2, Matteo Bassi1, Marc Tiebout1, Andrea Bevilacqua2 Infineon Technologies, Villach, Austria University of Padova, Padova, Italy 1 2 The relentless development of next-generation communica
ISSCC 2018 Session 23 Other
A 7.4-to-14GHz PLL with 54fsrms Jitter in 16nm FinFET for Integrated RF-Data-Converter SoCs
Didem Turker1, Ade Bekele1, Parag Upadhyaya1, Bob Verbruggen2,
Ying Cao1, Shaojun Ma1, Christophe Erdmann2, Brendan Farley2, Yohan Frans1, Ken Chang1 Xilinx, San Jose, CA; 2Xilinx, Dublin, Ireland 1 Direct-RF data converters [1,2] have seen increased adoption in remote-radiohead TX
ISSCC 2018 Session 24 Other
A 2MHz 150-to-400V Input Isolated DC-DC Bus Converter with Monolithic Slope-Sensing ZVS Detection Achieving 13ns Turn-On Delay and 1.6W Power Saving
Lin Cong1,2, Hoi Lee1
Texas Instruments, Santa Clara, CA 1 2 The growing development of industrial power supplies demands DC-DC converters that are increasingly efficient and reliable. Industrial bus supplies that operate from a front-end PFC
ISSCC 2018 Session 24 Other
A Fully Integrated Three-Level 11.6nC Gate Driver Supporting GaN Gate Injection Transistors
Achim Seidel1, Bernhard Wicht1,2
Leibniz University Hannover, Hannover, Germany 1 2 Due to their superior fast-switching performance, GaN transistors show enormous potential to enable compact power electronics in applications like renewable energy, elec
ISSCC 2018 Session 24 Other
A 3-to-40V VIN 10-to-50MHz 12W Isolated GaN Driver with Self-Excited tdead Minimizer Achieving
0.2ns/0.3ns tdead, 7.9% Minimum Duty Ratio and, 50V/ns CMTI
Xugang Ke, D. Brian Ma University of Texas at Dallas, Richardson, TX High-frequency (fSW), wide-input (VIN) power converters have gained increasing popularity in automotive applications due to the heightening demand for