ISSCC 2020
Session 18
Power Management
A Monolithic E-Mode GaN 15W 400V Offline Self-Supplied Hysteretic Buck Converter with 95.6% Efficiency
Texas Instruments, Freising, Germany, 3 Texas Instruments, Dallas, TX 1 2 Due to superior figures-of-merit (FoMs), gallium nitride (GaN) high-electron mobility transistors (HEMTs) offer a huge potential for high-voltage
ISSCC 2020
Session 18
Power Management
A 120mA Non-Isolated Capacitor-Drop AC/DC Power Supply
meters, appliances, smoke alarms to ground fault detectors require a non-isolated DC supply that is powered directly from the AC mains. These applications typically require the ability to handle up to 305VAC,rms at the i
ISSCC 2020
Session 18
Power Management
An 11MHz Fully Integrated 5kV Isolated DC-DC Converter Without Cross-Isolation-Barrier Feedback
University of Electronic Science and Technology of China, Chengdu, China 1 2 Galvanic isolation greatly enhances system safety and reliability in applications such as medical devices and sensor interfaces. In these appli
ISSCC 2020
Session 18
Power Management
ZVS Flyback-Converter ICs Optimizing USB Power Delivery for Fast-Charging Mobile Devices to Achieve 93.5% Efficiency
standard as a charging solution for mobile devices [1]. Moreover, the extended specification includes programmable power supply (PPS) which is suitable for fast charging mobile devices by allowing the power source to dyn
ISSCC 2020
Session 18
Power Management
A 92.8%-Peak-Efficiency 60A 48V-to-1V 3-Level Half-Bridge DC-DC Converter with Balanced Voltage on a Flying Capacitor
Samsung Electronics, Hwaseong, Korea 1 2 Demand for DC-DC voltage conversion from a 48V input has been on the rise due to proliferation of server and automotive applications with a 48V intermediate bus and 48V batteries,
ISSCC 2020
Session 18
Power Management
A DC to 35MHz Fully Integrated Single-Power-Supply Isolation Amplifier for Current- and Voltage-Sensing Front-Ends of Power Electronics
Increased switching frequency of power devices for power electronics allows for compact and lightweight circuit implementations for variety of applications, including power factor corrections, DC/DC converters, and motor
ISSCC 2020
Session 18
AI / ML
A Fully-Generic-Process Galvanic Isolator for Gate Driver with 123mW 23% Power Transfer and Full-Triplex 21/14/0.5Mb/s Bidirectional Communication Utilizing Reference-Free Dual-Modulation FSK DATA2 is transferred in the same manner as DATA1 through another transformer. Almost all the circuits excluding the DATA1 driver and I/O buffer operate at 1.5V supply to support sufficiently high operating speed. The driver operates with 5.5V supply to transfer power by the same transformer, and the rectifier placed in parallel with the DATA1 receiver extracts the received power.
Thanks to the VCO synchronization, demodulation can be realized by a delaybased digital frequency counting normalized by the oscillation period (tVCO). But there is a challenge in that the received signal edge is not per
ISSCC 2020
Session 19
Quantum & Photonics
A Scalable Cryo-CMOS 2-to-20GHz Digitally Intensive Controller for 4×32 Frequency Multiplexed Spin Qubits/Transmons in 22nm FinFET Technology for Quantum Computers
Andrea Corna1, Xiao Xue1, Charles Jeon2, Farhana Sheikh2, Esdras Juarez-Hernandez3, Brando Perez Esparza3, Huzaifa Rampurawala2, Brent Carlton2, Nodar Samkharadze4, Surej Ravikumar2, Carlos Nieva2, Sungwon Kim2, Hyung-Ji
ISSCC 2020
Session 19
Quantum & Photonics
A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot
Marcos Zurita1, Yvain Thonnart1, Maud Vinet1, Marc Sanquer2, Romain Maurand2, Aloysius G. M. Jansen2, Gaël Pillonnet1 CEA-LETI-MINATEC, Grenoble, France CEA-IRIG, Grenoble, France 1 2 To reach quantum supremacy, quantum
ISSCC 2020
Session 19
Quantum & Photonics
A 200dB FoM 4-to-5GHz Cryogenic Oscillator with an Automatic Common-Mode Resonance Calibration for Quantum Computing Applications
generation is required for the control electronics of quantum computers. To avoid limiting the performance of quantum bits, the frequency noise of a PLL should be <1.9kHzrms [1]. However, it is challenging for RF oscilla
ISSCC 2020
Session 2
Digital Processors
Zen 2: The AMD 7nm Energy-Efficient High-Performance x86-64 Microprocessor Core
design, fabricated in an energy-efficient TSMC 7nm FinFET process. Similar to AMD’s prior-generation core, codenamed “Zen” [1], the Core Complex Unit (CCX) with 4 cores in this version (Fig. 2.1.1) is used across a wide
ISSCC 2020
Session 2
Digital Processors
AMD Chiplet Architecture for High-Performance Server and Desktop Products
AMD, Austin, TX 1 2 AMD’s “Rome” and “Matisse” are second-generation AMD Infinity Fabric-based SoCs using 3 unique hybrid process technology chiplets to achieve leading performance, performance/$ and performance/W, targe
ISSCC 2020
Session 2
Digital Processors
A 220GOPS 96-Core Processor with 6 Chiplets 3D-Stacked on an Active Interposer Offering 0.6ns/mm
which is finally delivered to the chiplet through a micro-bump face-to-face power grid (Fig. 2.3.7). The SCVR input voltage (up to 2.5V) reduces total input current and the required number of power IOs in the package. Ea
ISSCC 2020
Session 2
Digital Processors
A 7nm High-Performance and Energy-Efficient Mobile Application Processor with Tri-Cluster CPUs and a Sparsity-Aware NPU
Jae Geun Song, Jinook Song, Hyeokman Kwon, Jaeyoung Lee, Jaesu Jung, Myungjin Kang, Jaehun Jeong, Yoonjoo Kwon, Nak Hee Seong Samsung Electronics, Hwaseong, Korea Mobile application processors (APs) must be extremely pow
ISSCC 2020
Session 2
Digital Processors
A 7nm FinFET 2.5GHz/2.0GHz Dual-Gear Octa-Core CPU Subsystem with Power/Performance Enhancements for a Fully Integrated 5G Smartphone SoC.
Gordon Gammie1, Hsinchen Chen1, Lee-Kee Yong1, Manzur Rahman1, Jenny Wiedemeier1, Ramu Madhavaram1, Alex Chiou2, Blundt Li2, Vincent Lin2, Rory Huang2, Michael Yang2, Achuta Thippana1, Osric Su2, SA Huang2 MediaTek, Aust
ISSCC 2020
Session 2
Digital Processors
A 16nm 3.5B+ Transistor >14TOPS 2-to-10W Multicore SoC Platform for Automotive and Embedded
VLIW DSP, Embedded Vision and Imaging Acceleration Rama Venkatasubramanian1, Don Steiss1, Greg Shurtz2, Tim Anderson1, Kai Chirca1, Raghavendra Santhanagopal1, Niraj Nandan1, Anish Reghunath1, Hetul Sanghvi1, Daniel Wu1,
ISSCC 2020
Session 2
Digital Processors
IBM z15: A 12-Core 5.2GHz Microprocessor
John Isakson3, Ofer Geva1, Brian Deskin4, Mark Cichanowski3, Dina Hamid1, Chris Cavitt1, Gregory Fredeman1, Anthony Saporito1, Ashutosh Mishra5, Alper Buyuktosunoglu6, Tobias Webel7, Preetham Lobo5, Pradeep Parashurama5,
ISSCC 2020
Session 20
Power Management
A 28µW IoT Tag That Can Communicate with Commodity WiFi Transceivers via a Single-Side-Band QPSK Backscatter Communication Technique
San Diego, CA 1 2 Nearly all IoT devices require wireless connectivity, and to keep costs down and deployment opportunities up, communication should ideally occur with widely deployed commodity hardware such as WiFi. How
ISSCC 2020
Session 20
Power Management
A 57nW Software-Defined Always-On Wake-Up Chip for IoT Devices with Asynchronous Pipelined Event-Driven Architecture and Time-Shielding Level-Crossing ADC
China 1 2 IoT devices usually operate in random-sparse-event scenarios (Fig. 20.2.1). To avoid missing events, traditionally a periodic-wake-up frequency [1] must be orders of magnitude higher than the average event rate
ISSCC 2020
Session 20
Power Management
A 4.0×3.7×1.0mm3-MEMS CMOS Integrated E-Nose with
Si Hoon Lee1, Kwangmin Park1, Jaeheung Lim1, Minchul Lee1, Jeongho Park1, Hyun Kim1, Young Ok Lee2, Hyun Su Ahn2, Eunseok Shin1, Hyungjong Ko1, Seoungjae Yoo1, Hyunsurk Ryu1, Yongin Park1, Joonseok Kim1, Long Yan1 Samsun
ISSCC 2020
Session 20
Power Management
3D Surgical Alignment with 100µm Resolution Using Magnetic-Field Gradient-Based Localization
Arian Hashemi Talkhooncheh, Minwo Wang, Mikhail G. Shapiro, Azita Emami California Institute of Technology, Pasadena, CA Substantial advances in the field of surgery have taken place in recent years, which aim at decreas
ISSCC 2020
Session 21
Digital Processors
A Fully Integrated Genetic Variant Discovery SoC for Next-Generation Sequencing
Chao-Yang Yu3, Nian-Shyang Chang3, Ling-Chien Chen3, Jia-Rong Chang3, Chun-Pin Lin3, Hung-Lieh Chen3, Chi-Shi Chen3, Jui-Hung Hung2, Chia-Hsiang Yang1 National Taiwan University, Taipei, Taiwan National Chiao Tung Univer
ISSCC 2020
Session 21
Digital Processors
A 1.5µJ/Task Path-Planning Processor for 2D/3D Autonomous Navigation of Micro Robots
Autonomous micro robots have been deployed for various applications, ranging from unmanned package delivery to smart aerial surveillance. These robots possess intelligence for perception, make decisions based on the coll
ISSCC 2020
Session 21
Digital Processors
A 5.69mm2 0.98nJ/Pixel Image-Processing SoC with 24b High-Dynamic-Range and Multiple Sensor Format Support for Automotive Applications
Chang-Hung Tsai, Ying-Jui Chen, TH Wu, Hue-Min Lin, Han-Liang Chou, Abrams Chen, Andy-HB Wang, WC Gu, Wayne Hsieh, Jing-Ying Chang, Shou-Chun Liao, CT Ho, Larry Chu, Sokonisa Wei, CH Wang, Kevin Jou MediaTek, Hsinchu, Ta
ISSCC 2020
Session 22
Memory
A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme
So-Young Kim, Yesin Ryu, Jaewon Park, Sinho Kim, Sanguhn Cha, Donghak Shin, Jungyu Lee, Jong-Pil Son, Byung-Kyu Ho, Seong-Jin Cho, Beomyong Kil, Sungoh Ahn, Baekmin Lim, Yongsik Park, Kijun Lee, Myung-Kyu Lee, Seungduk B
ISSCC 2020
Session 22
Memory
A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo
Dong Uk Lee, Ho Sung Cho, Jihwan Kim, Young Jun Ku, Sangmuk Oh, Chul Dae Kim, Hyun Woo Kim, Woo Young Lee, Tae Kyun Kim, Tae Sik Yun, Min Jeong Kim, SeungGyeon Lim, Seong Hee Lee, Byung Kuk Yun, Jun Il Moon, Ji Hwan Park
ISSCC 2020
Session 22
Memory
A 32Gb/s Digital-Intensive Single-Ended PAM-4 Transceiver for High-Speed Memory Interfaces Featuring a 2-Tap Time-Based Decision Feedback Equalizer and an In-Situ Channel-Loss Monitor
Single-ended transceivers that can deliver high-data rates at reduced supply voltages are required to meet the ever-growing demands of future memory interfaces. The performance of conventional non-return-to-zero (NRZ) li
ISSCC 2020
Session 22
Memory
An 8nm 18Gb/s/pin GDDR6 PHY with TX Bandwidth Extension and RX Training Technique
Jaehyun Jeong, Shinyoung Yi, Juyoung Kim, Eunsu Kim, Sukhyun Jung, Sangyun Hwang, Jihun Oh, Kwanyeob Chae, Kyoung-Hoi Koo, Sanghune Park, Jongshin Shin, Jaehong Park Samsung Electronics, Hwaseong, Korea Recent emerging a
ISSCC 2020
Session 22
Memory
A 0.8-to-2.3GHz Quadrature Error Corrector with Correctable Error Range of 101.6ps Using Minimum Total Delay Tracking and Asynchronous Calibration On-Off Scheme for DRAM Interface
paths also increase. Thus, multiphase clocks are typically utilized in DRAMs to relax timing margins because of the reduced timing budget. However, phase errors between multiphase clocks, due to device mismatch, degrade
ISSCC 2020
Session 23
Analog Circuits
A 4GS/s 80dB DR Current-Domain Analog Front-End for Phase-Coded Pulse-Compression Direct Time-of-Flight Automotive LiDAR
Ken Wojciechowski, Christoph Lang Robert Bosch, Sunnyvale, CA LiDARs enable long-distance ranging at high spatial resolution and moderate computational effort. Pulsed-LiDARs measuring the direct-time-of-flight (dTOF) per
ISSCC 2020
Session 23
Analog Circuits
A 70µW 1.19mm2 Wireless Sensor with 32 Channels of Resistive and Capacitive Sensors and Edge-Encoded PWM UWB Transceiver
Emerging wireless multi-channel resistive and capacitive (RC) sensor interface circuits provide opportunities for various applications such as environmental monitoring [1], wearable [2] and human-computer interaction [3]
ISSCC 2020
Session 23
Analog Circuits
A 0-to-60V-Input VCM Coulomb Counter with SignalDependent Supply Current and ±0.5% Gain Inaccuracy from -50°C to 125°C Caspar van Vroonhoven
charge, (SOC). A straightforward way to determine SOC is to keep track of the current flowing in and out of a battery, a method known as coulomb counting. Compared to other methods such as voltage or impedance monitoring
ISSCC 2020
Session 23
Analog Circuits
A 28W -108.9dB/-102.2dB THD/THD+N Hybrid ΔΣ-PWM Class-D Audio Amplifier with 91% Peak Efficiency and Reduced EMI Emission around two-stage feedforward OTAs which together draw 1.8mA from a 1.8V supply. This combination of multilevel quantization together with a high fS results in a loop gain of >76dB (26dB higher than [6]) in the audio band irrespective of process spread, thus ensuring high linearity.
Lucien Breems2, Marco Berkhout3, Qinwen Fan1, Kofi A.A. Makinwa1 The fully differential H-bridge output stage is shown in Fig. 23.4.1. It consists of four identical N-LDMOS devices (MH and ML) with an RON of ~100m$, whic
ISSCC 2020
Session 23
Analog Circuits
A 0.41mA Quiescent Current, 0.00091% THD+N ClassD Audio Amplifier with Frequency Equalization for PWMResidual-Aliasing Reduction
a pulse-width-modulation (PWM) modulator and a switching power stage is commonly adopted since it effectively suppresses the power-stage nonlinearity to improve total harmonic distortion plus noise (THD+N). However, unle
ISSCC 2020
Session 23
Analog Circuits
A 2pA/√Hz Transimpedance Amplifier for Miniature Ultrasound Probes with 36dB Continuous-Time Gain Compensation
ultrasound probes, such as the intra-cardiac echography (ICE) probe shown in Fig. 23.6.1, increasingly employ in-probe ASICs to interface with the elements of an ultrasound transducer array to improve signal quality and
ISSCC 2020
Session 23
Analog Circuits
A 130dB CMRR Instrumentation Amplifier with Common-Mode Replication
Interfacing with high-impedance sensors, such as dry-contacted electrodes and accelerometers requires high CMRR with sufficient input impedance concurrently. From the system point of view, the total CMRR (TCMRR) is deter
ISSCC 2020
Session 23
Analog Circuits
A 41µW 16MS/s 99.2dB-SFDR Capacitively Degenerated Dynamic Amplifier with Nonlinear-Slope-Factor Compensation
performance in analog front-ends and ADCs must have sufficiently low noise and high linearity to achieve overall system performance targets. Achieving the target noise level requires a certain amount of power, but nonlin
ISSCC 2020
Session 24
AI / ML
A 24-to-30GHz Watt-Level Broadband Linear Doherty Power Amplifier with Multi-Primary Distributed-ActiveTransformer Power-Combining Supporting 5G NR FR2 64-QAM with >19dBm Average Pout and >19% Average PAE
The continuous worldwide demand for multi-Gb/s data-rate has driven the rapid development and standardization of 5G New Radio (NR) specifications in the mmwave bands [1-3]. As a result, there is a surge of interest in hi
ISSCC 2020
Session 24
RF & Wireless
A Reconfigurable Series/Parallel Quadrature-CouplerBased Doherty PA in CMOS SOI with VSWR Resilient Linearity and Back-Off PAE for 5G MIMO Arrays
reconfigurations remain the same. In addition, the Main/Aux-PAs role exchange for series/parallel Doherty operation is enabled by setting the bias of two adaptive biasing circuits. Naga Sasikanth Mannem, Min-Yu Huang, Tz
ISSCC 2020
Session 24
RF & Wireless
A 28GHz Current-Mode Inverse-Outphasing Transmitter Achieving 40%/31% PA Efficiency at Psat/6dB PBO and Supporting 15Gbit/s 64-QAM for 5G Communication
As mm-wave offers broader spectra and proportionate capacity increase, it will be extensively employed in 5G-and-beyond communication systems to address the exponentially growing data-rate demand. Viable mm-wave TX or PA
ISSCC 2020
Session 24
RF & Wireless
A Watt-Level Multimode Multi-Efficiency-Peak Digital Polar Power Amplifier with Linear Single-Supply ClassG Technique
Signals for next-generation communication systems typically have high peak-toaverage power ratios (PAPR) (e.g., 10 to 13dB), forcing operation at deep output power backoff (PBO). A good efficiency at PBO is required to m
ISSCC 2020
Session 24
AI / ML
A 15b Quadrature Digital Power Amplifier with Transformer-Based Complex-Domain Power-Efficiency Enhancement
law to provide compact die area, better interface to digital back-end, and higher power efficiency due to the faster switching nature of core devices even in face of reduced supply voltages. Moreover, the integration of
ISSCC 2020
Session 24
RF & Wireless
An Instantaneously Broadband Ultra-Compact Highly Linear PA with Compensated Distributed-Balun Output Network Achieving >17.8dBm P1dB and >36.6% PAEP1dB over 24 to 40GHz and Continuously Supporting 64-/256-QAM 5G NR Signals over 24 to 42GHz
5G communication promises 10× to 100× data-rate increase to radically change future wireless connectivity. Millimeter-wave (mm-wave) bands can potentially deliver extreme data rates and capacity compared to low-GHz bands
ISSCC 2020
Session 24
RF & Wireless
A 15dBm 12.8%-PAE Compact D-Band Power Amplifier with Two-Way Power Combining in 16nm FinFET CMOS
The drive for higher data-rates has led to the allocation of the spectrum above 100GHz for D-band communication. A high level of integration in a nm-CMOS technology is necessary to keep the cost low and allow for efficie
ISSCC 2020
Session 24
RF & Wireless
A W-Band Power Amplifier with Distributed CommonSource GaN HEMT and 4-Way Wilkinson-Lange Combiner Achieving 6W Output Power and 18% PAE at 95GHz
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing, China 1 2 W-band power amplifiers (PAs) play an important role in Gb/s-data-rate wireless communication, imaging, and radar applic
ISSCC 2020
Session 25
Digital Circuits
A Fully Synthesizable Distributed and Scalable All-Digital LDO in 10nm CMOS
regulation for digital IP blocks. A distributed LDO architecture, where a number of dispersed LDO units supply a single domain with shared power delivery network (PDN), has been recently proposed for point-of-load regula
ISSCC 2020
Session 25
Digital Circuits
A 480mA Output-Capacitor-Free Synthesizable Digital LDO Using CMP-Triggered Oscillator and Droop Detector
intellectual properties (IPs) for better energy efficiency in a system-on-chip design
ISSCC 2020
Session 25
Digital Circuits
A 65nm Edge-Chasing Quantizer-Based Digital LDO Featuring 4.58ps-FoM and Side-Channel-Attack Resistance
Low-Dropout Regulators (LDOs) are commonly desired for fine-grained power management in SoCs because of their compact area, high current efficiency, and small output ripple. Digital LDOs (DLDOs) are increasingly adopted
ISSCC 2020
Session 25
Digital Circuits
A Scalable 20GHz On-Die Power-Supply Noise Analyzer with Compressed Sensing
Power-supply noise (PSN) is a key consideration that determines the performance, as well as functionality of ICs, especially for modern SoCs with significantly increased scale, level of integration, and sophisticated vol
ISSCC 2020
Session 25
Digital Circuits
A Self-Calibrated 1.2-to-3.8GHz 0.0052mm2 Synthesized Fractional-N MDLL Using a 2b Time-Period Comparator in 22nm FinFET CMOS
Intel, Hillsboro, OR errors, which are compensated by the DTC-gain-correction loop. Each delay stage uses tristate inverter-based multiplexer (MUX) and switched capacitor banks to realize coarse and fine delays, respecti