ISSCC 2023
Session 17
Data Converters
A 7b 4.5GS/s 4× Interleaved SAR ADC with Fully On-Chip Background Timing Skew Calibration
With the development of broadband wireless communication and DSP-based wireline communication, there is a rising demand for medium-resolution (6~8bit) ADCs with multi-gigahertz sampling rates and low power consumption. T
ISSCC 2023
Session 17
Data Converters
A 3mW 2.7GS/s 8b Subranging ADC with Multiple-ReferenceEmbedded Comparators
A subranging ADC is a good choice for wideband applications since the numerous comparators for a flash ADC can be avoided [1-5]. However, despite the reduced number of comparators that a subranging ADC requires, these co
ISSCC 2023
Session 17
Data Converters
A Single-Channel 10GS/s 8b >36.4dB SNDR Time-Domain ADC Featuring Loop-Unrolled Asynchronous Successive Approximation in 28nm CMOS
Kun Gao Xinxin Technologies, Singapore, Singapore *Equally Credited Authors (ECAs) 1 2 High data throughput and wideband network communications demand high-speed (several to tens of GS/s), moderate-resolution (6-10b) ADC
ISSCC 2023
Session 18
Wireless
A W-Band Transceiver Array with 2.4GHz LO Synchronization Enabling Full Scalability for FMCW Radar
Closing the angular resolution gap between CMOS radar and optical imaging systems can enable an entirely new cost-effective radar-centric perception solution, but requires extremely large transceiver (TRX) arrays to achi
ISSCC 2023
Session 18
Wireless
A 128Gb/s 1.95pJ/b D-Band Receiver with Integrated PLL and ADC in 22nm FinFET
Somnath Kundu1, Peter Sagazio1, Hariprasad Chandrakumar1, Thomas Brown1, Brent Carlton1, Christopher Hull4, Steven Callender1, Stefano Pellerano1 Intel, Hillsboro, OR, 2Intel, Santa Clara, CA, 3now with Apple, Sunnyvale,
ISSCC 2023
Session 18
Wireless
71-to-89GHz 12Gb/s Double-Edge-Triggered Quadrature RFDAC with LO Leakage Suppression Achieving 20.5dBm Peak Output Power and 20.4% System Efficiency
The growing demand of millimeter-wave (mm-wave) wireless transmission leads to the requirement of low-cost, high-efficiency, and multi-Gb/s data-rate wireless systems. Allocated by the Federal Communications Commission (
ISSCC 2023
Session 18
Wireless
A 4×4 607GHz Harmonic Injection-Locked Receiver Array Achieving 4.4pW/√Hz NEP in 28nm CMOS is beneficial for THz applications as they typically have limited available illumination power.
As illustrated in Fig. 18.4.4, the angular resolution of the optical setup depends on two properties: the pixel-beam-separation (PBS) angle φPBS and the half-power beamwidth (HPBW) θHPWB. For the optical setup in Fig. 18
ISSCC 2023
Session 19
Other
An Interferer-Tolerant Harmonic-Resilient Receiver with >+10dBm 3rd-Harmonic Blocker P1dB for 5G NR Applications
The sub-6GHz spectrum is heavily utilized by 5G New Radio (NR), as well as traditional cellular and WiFi technologies. A major challenge in designing SAW-less wideband radio receivers (especially targeting the sub-2GHz r
ISSCC 2023
Session 19
Other
A 2.95mW/element Ka-band CMOS Phased-Array Receiver Utilizing On-Chip Distributed Radiation Sensors in Low-Earth-Orbit Small Satellite Constellation
Jun Sakamaki1, Ashibir Aviat Fadila1, Zheng Li1, Yun Wang1, Jumpei Sudo2, Makoto Higaki2, Soichiro Inoue2, Takashi Eishima2, Takashi Tomura1, Jian Pang1, Hiroyuki Sakai1, Kenichi Okada1, Atsushi Shirane1 Tokyo Institute
ISSCC 2023
Session 19
Other
A Small-Satellite-Mounted 256-Element Ka-Band CMOS Phased-Array Transmitter Achieving 63.8dBm EIRP Under 26.6W Power Consumption Using Single/Dual Circular Polarization Active Coupler
Jun Sakamaki1, Hans Herdian1, Sena Kato1, Michihiro Ide1, Yuncheng Zhang1, Ashbir Aviat Fadila1, Zheng Li1, Chun Wang1, Yun Wang1, Jumpei Sudo2, Makoto Higaki2, Nahoka Kawaguchi2, Masaya Nitta2, Soichiro Inoue2, Takashi
ISSCC 2023
Session 2
Digital Processors
“Zen 4”: The AMD 5nm 5.7GHz x86-64 Microprocessor Core
Brett Johnson2, Russell Schreiber3, Carson Henrion2, Kevin Gillespie1, Tom Burd4, Harry Fair1, David Johnson2, Jonathan White1, Scott McLelland1, Steven Bakke1, Javin Olson1, Ryan McCracken1, Matthew Pickett2, Aaron Hori
ISSCC 2023
Session 2
Digital Processors
A 5G Mobile Gaming-Centric SoC with High-Performance Thermal Management in 4nm FinFET
Jia-Ming Chen, Eric Jia-Wei Fang, Sung S.-Y. Hsueh, Jack Ciao, Barry Chen, Chuck Chang, Ping Kao, Ericbill Wang, Harry H. Chen, Hugh Mair, Shih-Arn Hwang MediaTek, Hsinchu, Taiwan In recent years, mobile gaming has grown
ISSCC 2023
Session 2
Digital Processors
Amorphica: 4-Replica 512 Fully Connected Spin 336MHz Metamorphic Annealer with Programmable Optimization Strategy and Compressed-Spin-Transfer Multi-Chip Extension
Genta Inoue1, Akira Hyodo1, Ángel López García-Arias1, Kota Ando2, Bruno Hideki Fukushima-Kimura2, Ryota Yasudo3, Thiem Van Chu1, Masato Motomura1 Tokyo Institute of Technology, Yokohama, Japan, 2Hokkaido University, Sap
ISSCC 2023
Session 2
Digital Processors
A Fully Integrated End-to-End Genome Analysis Accelerator for Next-Generation Sequencing
Wen-Ching Chen3, Liang-Yi Lin3, Nian-Shyang Chang3, Chun-Pin Lin3, Chi-Shi Chen3, Jui-Hung Hung2,4, Chia-Hsiang Yang1,2 National Taiwan University, Taipei, Taiwan GeneASIC Technologies, Hsinchu, Taiwan 3 Taiwan Semicondu
ISSCC 2023
Session 2
Digital Processors
A 28nm 142mW Motion-Control SoC for Autonomous Mobile Robots
(AMRs) have proven useful for smart factories and have potential to revolutionize critical missions, such as disaster rescue [1]. As illustrated in Fig. 2.5.1, AMRs can perceive the environment, plan for assigned tasks a
ISSCC 2023
Session 2
AI / ML
VISTA: A 704mW 4K-UHD CNN Processor for Video and Image Spatial/Temporal Interpolation Acceleration
Video convolutional neural networks (CNNs) have achieved great success in highresolution imaging applications, such as video super-resolution (VSR) and demonstrated superior quality and temporal consistency by leveraging
ISSCC 2023
Session 2
Digital Processors
MetaVRain: A 133mW Real-Time Hyper-Realistic 3D-NeRF Processor with 1D-2D Hybrid-Neural Engines for Metaverse on Mobile Devices
A neural radiance field (NeRF) [1] uses a deep neural network (DNN) to create 3D models by training the DNN to memorize 3D scene geometry from a few photos. Prior work uses conventional computer graphic algorithms, such
ISSCC 2023
Session 20
Power Management
A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver for High dV/dt SiC Power Switch
Semiconductor, Hsinchu, Taiwan 1 2 Silicon carbide (SiC) MOSFET devices offer better performance in high-voltage (HV) and high-current applications, such as electric vehicles, railways, and motor drives due to their low
ISSCC 2023
Session 20
Power Management
A Condition-Adaptive ∆f3-EMI Control GaN Switching Regulator With Modulation Frequency Envelope Tracking For Full-Spectrum Automotive CISPR 25 Compliance
Texas Instruments, Dallas, TX 1 2 As the fastest growing sector of global IC market, automotive IC industry advances quickly toward record high levels of electrification, communication, sensing and autonomous driving. A
ISSCC 2023
Session 20
Power Management
A GaN Gate Driver with On-chip Adaptive On-time Controller and Negative Current Slope Detector
Chang-Lin Go1, Shao-Chang Huang1, Ke-Horng Chen1, Kuo-Lin Zheng1,2, Ying-Hsi Lin3, Shian-Ru Lin3, Tsung-Yen Tsai3 National Yang Ming Chiao Tung University, Hsinchu, Taiwan Chip-GaN Power Semiconductor, Hsinchu, Taiwan 3
ISSCC 2023
Session 20
Power Management
Multiple-Phase Accelerated Current Control in Bidirectional Energy Transfer of Automotive High-Voltage and Low-Voltage Batteries
Hsinchu, Taiwan 3 Realtek Semiconductor, Hsinchu, Taiwan 1 2 48V and 12V power supplies play a critical role in electric vehicle (EV) power systems. In general, 48V transfers energy to 12V to supply lidar, camera, sensor
ISSCC 2023
Session 21
Other
A 65nm CMOS Living-Cell Dynamic Fluorescence Sensor with 1.05fA Sensitivity at 600/700nm Wavelengths
Richard M. Murray1, Azita Emami1 California Institute of Technology, Pasadena, CA Texas A&M University, College Station, TX 1 2 Integrated, low-cost and miniaturized devices that can detect clinically relevant biomarkers
ISSCC 2023
Session 21
Other
A 22µW Peak Power Multimodal Electrochemical Sensor Interface IC for Bioreactor Monitoring
The Netherlands 1 2 Bioreactors are employed in many industries like food, beverage, chemical, and biopharmaceutical to grow biologically active compounds. Bioreactors range in size from large industrial tanks for manufa
ISSCC 2023
Session 21
Other
A CMOS Multi-Functional Biosensor Array for Rapid LowConcentration Analyte Detection with On-Chip DEP-Assisted Active Enrichment and Manipulation with No External Electrodes
Diego, CA 1 3 Electronic biosensors are transducers that convert biomolecular or cellular information to electronic readouts. Though advances in electronics keep improving biosensors’ performance, often their ultimate de
ISSCC 2023
Session 21
Other
A 263GHz 32-Channel EPR-on-a-Chip Injection-Locked VCO-Array
Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany 3 Institute for Microelectronics Stuttgart (IMS CHIPS), Stuttgart, Germany *Equally Credited Authors (ECAs) 1 2 Electron paramagnetic resonance (EPR)
ISSCC 2023
Session 21
Other
An LTE-Harvesting BLE-to-WiFi Backscattering Chip for Single-Device RFID-Like Interrogation
Dinesh Bharadia, Patrick P. Mercier University of California, San Diego, CA *Equally Credited Authors (ECAs) Recent work in backscatter modulation has enabled very low-power communication between an IoT tag and commodity
ISSCC 2023
Session 21
Other
ASIL-D Compliant Battery Monitoring IC with High Measurement Accuracy and Robust Communication
Donghyeon Kim2, Youngwoon Ko2, Jin-Yong Jeon2, Jooho Lee2, Young-Suk Son2, Sang-Gug Lee1, Kyeongha Kwon1 Korea Advanced Institute of Science and Technology, Daejeon, Korea Autosilicon, Daejeon, Korea 1 2 Electric vehicle
ISSCC 2023
Session 22
Other
A 12.4TOPS/W @ 136GOPS AI-IoT System-on-Chip with 16
Francesco Conti1, Davide Rossi1, Gianna Paulin2, Angelo Garofalo1, Alfio Di Mauro2, Georg Rutishauer2, Gianmarco Ottavi1, Manuel Eggimann2, Hayate Okuhara1, Vincent Huard3, Olivier Montfort3, Lionel Jure3, Nils Exibard3,
ISSCC 2023
Session 22
Other
A 28nm 2D/3D Unified Sparse Convolution Accelerator with Block-Wise Neighbor Searcher for Large-Scaled Voxel-Based Point Cloud Network
important role in many emerging applications such as autonomous driving, visual navigation and virtual reality. Recent research shows that adopting 3D voxel-based sparse convolution (SCONV) as a backbone can achieve bett
ISSCC 2023
Session 22
AI / ML
A 127.8TOPS/W Arbitrarily Quantized 1-to-8b ScalablePrecision Accelerator for General-Purpose Deep Learning
deep learning accelerators has focused on inference tasks to improve performance by means of maximally utilizing sparsity and quantization. Unlike CNN-only networks, however, recent state-of-the-art (SOTA) models consist
ISSCC 2023
Session 22
Other
A 28nm 11.2TOPS/W Hardware-Utilization-Aware Neural-Network Accelerator with Dynamic Dataflow
Research Institute, Hsinchu, Taiwan 1 With the rapid evolution of AI technology, various neural network structures have been developed for diverse applications. As a typical ease, Fig. 22.4.1 shows that the convolution (
ISSCC 2023
Session 22
AI / ML
C-DNN: A 24.5-85.8TOPS/W Complementary-Deep-NeuralNetwork Processor with Heterogeneous CNN/SNN Core Architecture and Forward-Gradient-Based Sparsity Generation
have been shown to achieve the same accuracy as Convolutional-Neural-Networks (CNNs). By using CNN-to-SNN conversion, SNNs become a promising candidate for ultra-low power AI applications [1]. For example, compared to BN
ISSCC 2023
Session 22
AI / ML
ANP-I: A 28nm 1.5pJ/SOP Asynchronous Spiking Neural Network Processor Enabling Sub-0.1µJ/Sample On-Chip Learning for Edge-AI Applications
With the development of on-chip learning processors for edge-AI applications, energy efficiency of NN inference and training is more and more critical. As on-chip training energy dominates the energy consumption of edge-
ISSCC 2023
Session 22
Other
DL-VOPU: An Energy-Efficient Domain-Specific Deep-LearningBased Visual Object Processing Unit Supporting Multi-Scale Semantic Feature Extraction for Mobile Object Detection/Tracking Applications
years, deep learning-based visual object detection/tracking (VODT) has been widely used in intelligent applications such as autonomous driving, UAV, smart robot and VR/AR. As general AI hardware platforms, GPUs and gener
ISSCC 2023
Session 22
Other
A 0.81mm2 740µW Real-Time Speech Enhancement Processor Using Multiplier-Less PE Arrays for Hearing Aids in 28nm CMOS
Speech enhancement (SE) is a task to improve voice quality and intelligibility by removing noise from the audio, which is widely adopted in hearing assistive devices. Hearing aids are generally worn in or behind the ear,
ISSCC 2023
Session 22
AI / ML
A 12nm 18.1TFLOPs/W Sparse Transformer Processor with
Thierry Tambe1, Jeff Zhang1, Coleman Hooper1, Tianyu Jia2, Paul N. Whatmough1,3, Joseph Zuckerman4, Maico Cassel Dos Santos4, Erik Jens Loscalzo4, Davide Giri4, Kenneth Shepard4, Luca Carloni4, Alexander Rush5, David Bro
ISSCC 2023
Session 23
Analog Circuits
A 7.9fJ/Conversion-Step and 37.12aFrms Pipelined-SAR Capacitance-to-Digital Converter with kT/C Noise Cancellation and Incomplete-Settling-Based Correlated Level Shifting
sensor applications, capacitive sensors are widely used to convert various capacitances into digital signals, and the demand for power-efficient high-resolution capacitance-to-digital converters (CDCs) is on the rise. In
ISSCC 2023
Session 23
Analog Circuits
A 40A Shunt-Based Current Sensor with ±0.2% Gain Error from -40°C to 125°C and Self-Calibration
Yoshikazu Furuta2, Kofi A. A. Makinwa1 Delft University of Technology, Delft, The Netherlands MIRISE Technologies, Aichi, Japan 1 2 Low-cost metal (e.g., PCB trace) shunts can be used to make accurate current sensors (<1
ISSCC 2023
Session 23
Analog Circuits
A 51A Hybrid Magnetic Current Sensor with a Dual Differential DC Servo Loop and 43mArms Resolution in a 5MHz Bandwidth
Each quadrature component is chopper demodulated and then integrated via Rs3 (=10M&) and Cfsp (=5pF) to generate a correction signal that is upmodulated and fed back to A4 via an auxiliary input stage. The offset of A4 i
ISSCC 2023
Session 23
Analog Circuits
A Closed-Loop 12bit CMOS-Integrated Stress Sensor System with 4bit Adjustable Sensitivity from 178 to 11kPa/LSB at up to 22.5kS/s and 5bit Dynamic Range Adjustment.
University of Freiburg - IMTEK, Freiburg, Germany 1 2 The increasing popularity of integrated stress sensors due to emerging fields such as Internet-of-Things (IoT), robotics and predictive maintenance led to various imp
ISSCC 2023
Session 23
Analog Circuits
A Sub-1V 810nW Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.15°C (3σ) from -55°C to 125°C
Tsinghua University, Beijing, China 1 2 BJT-based temperature sensors are widely used because they can achieve excellent accuracy after 1-point calibration. However, they typically dissipate µWs of power and require supp
ISSCC 2023
Session 23
Analog Circuits
A 2.98pJ/conversion 0.0023mm2 Dynamic Temperature Sensor with Fully On-Chip Corrections
Nowadays, many battery-operated SoCs for IoT and environmental monitoring applications are equipped with temperature sensors. In these miniaturized systems, power and area are two critical concerns. One challenge for tem
ISSCC 2023
Session 23
Analog Circuits
A BJT-Based Temperature Sensor with ±0.1°C (3σ) Inaccuracy from -55°C to 125°C and a 0.85pJ∙K2 Resolution FoM Using Continuous-Time Readout
temperature sensors are widely used due to their high accuracy over a wide temperature range with a low-cost 1-point trim. Although resistor-based sensors can achieve better energy efficiency, they typically require a 2-
ISSCC 2023
Session 24
mm-Wave
A 0.64-to-0.69THz Beam-Steerable Coherent Source with 9.1dBm Radiated Power and 30.8dBm Lensless EIRP in 65nm CMOS
Si-based compact terahertz (THz) integrated systems have been successfully demonstrated in imaging, spectroscopy, high-speed data transmission, and radar applications in the low-THz band [1]. A THz signal source is indis
ISSCC 2023
Session 24
mm-Wave
A 200-to-350GHz SiGe BiCMOS Frequency Doubler with Slotline-Based Mode-Decoupling Harmonic-Tuning Technique Achieving 1.1-to-4.7dBm Output Power
Sanechips Technology, Shenzhen, China 1 2 Silicon-based ultra-broadband terahertz (THz) generation has attracted growing interest in recent years, as it provides a low-cost and high-integration solution for high-resoluti
ISSCC 2023
Session 25
RF & Wireless
A 4.1W Quadrature Doherty Digital Power Amplifier with 33.6% Peak PAE in 28nm Bulk CMOS
and higher output-power requirements, especially at the base station side. As shown in Fig. 25.1.1, compared to the traditional analog-transmitter architectures with high-power GaAs/GaN poweramplifier (PA) modules, digit
ISSCC 2023
Session 25
RF & Wireless
A 19.7-to-43.8GHz Power Amplifier with Broadband Linearization Technique in 28nm Bulk CMOS
Fudan University, Shanghai, China 1 2 5G mm-wave systems in the frequency-range-2 (FR2) band (ranging from 24.25 to 43.5GHz) are expected to provide multi-gigabit-per-second (mGb/s) data-rates. Different FR2 bands are em
ISSCC 2023
Session 25
RF & Wireless
A 4b RFDAC at 8GS/s for FMCW Chirps with 4GHz Bandwidth in 10µs
Niels Christoffers1, Christoph Wagner1, Thorsten Brandt1, Andreas Stelzer2 Infineon Technologies, Linz, Austria Johannes Kepler University, Linz, Austria 1 2 A frequency-modulated continuous-wave (FMCW) radar is highly r
ISSCC 2023
Session 25
RF & Wireless
A 1-to-5GHz All-Passive Frequency-Translational 4th-Order N-path Filter with Low-Power Clock Boosting for High Linearity and Relaxed Pdc-Frequency Trade-Off to the LO overlap while using 2× higher-duty-cycle clocks, thereby enabling a 4 to 5× higher operating frequency compared to higher-order N-path filters [1-5]. These inductors do not limit tuning range at all, unlike the coupling inductors in prior higherorder N-path topologies.
The higher-order N-path filter was designed to operate from 1 to 5GHz. The three capacitors CF, CG, and CB of the baseband elliptical-LPF loads are designed with a 5b control to program the bandwidth, selectivity, and OO
ISSCC 2023
Session 26
Medical & Bio
A Source-Driver IC Including Power-Switching Fast-Slew-Rate Buffer and 8Gb/s Effective 3-Tap DFE Receiver Achieving 4.9mV DVRMS and 17V/µs Slew Rate for 8K Displays and Beyond
and faster refresh rate displays, the nextgeneration TVs and gaming monitors are expected to accommodate 8K resolution with a refresh rate of 120Hz and beyond. In such display systems, about one thousand channels will be