← 返回 JSSC 论文列表JSSC 2006第1期RF & Wireless0.25 μm CMOS
A 195-Gbs 12-W Inductive Inter-Chip Wireless Superconnect With Transmit Power Co
通过电感耦合实现195 Gb/s的无线接口，功耗1.2W，用于4层堆叠芯片通信。
195 Gb/s, 1.2 W, 1 Gb/s/channel, 15-43 μm通信距离
电感耦合无线接口堆叠芯片低功耗动态功率控制
▸创新点1：电感耦合无线接口（系统创新）- 采用电感耦合技术实现4芯片堆叠封装内195 Gb/s的聚合数据速率，通过50微米间距排列195个1 Gb/s/通道的收发器，在0.25微米CMOS工艺下实现15-43微米通信距离，显著提升集成密度与带宽效率。
▸创新点2：动态发射功率控制（电路创新）- 根据通信距离动态调整发射功率，不仅降低1.2 W总功耗，还减少通道间串扰，优化能效比（55%功耗降低）与信号完整性。
▸创新点3：低功耗单端发射器（电路创新）- 采用单端架构设计，相比差分方案节省55%功耗，支持多连接场景，在1 Gb/s/通道速率下实现0.25微米工艺的高能效传输。
▸创新点4：超薄芯片集成（工艺创新）- 通过将芯片厚度减薄至10微米，使电感耦合在15-43微米间距内稳定工作，突破传统封装对无线互连距离的限制。
Abstract
A wireless interface by inductive coupling achieves
aggregated data rate of 195 Gb/s with power dissipation of 1.2 W
among 4-stacked chips in a package where 195 transceivers with
the data rate of 1 Gb/s/channel are arranged in 50-
m pitch in
0.25-
m CMOS technology. By thinning chip thickness to 10
m,
the interface communicates at distance of 15
m at minimum
and 43
m at maximum. A low-power single-end transmitter
achieves 55% power reduction for multiple connections. The
transmit power is d