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A Reprogrammable EDGE Baseband and Multimedia Handset SoC With 6-Mbit Embedded DRAM Andrew M. Cofler, Francois Druilhe, Denis Dutoit, and
一款可重编程EDGE基带与多媒体手机SoC,集成6Mbit嵌入式DRAM指令存储器。
130nm CMOS, 690μA待机电流, 500小时GSM/EDGE终端续航
EDGE基带多媒体SoC嵌入式DRAM双核架构低功耗设计
▸双核架构(微控制器与DSP)
▸多层总线互连接口与硬件加速器
▸6Mbit嵌入式DRAM指令存储器支持现场软件升级
Abstract
A CMOS EDGE baseband and multimedia handset SoC features a dual core (microcontroller and DSP) architecture together with all the necessary interface logic and hardware ac- celerators interconnected by a multi-layer bus. The DSP memory hierarchy features an instruction cache coupled to a 6-Mbit em- bedded DRAM instruction memory allowing in the field software flexibility (for example dynamic upgrade of DSP software), while minimizing power and area (closely matching a ROM based solu- tion). The chip is implemented in a 130-nm 6-metal layer CMOS process and is packaged in a 12 12 ball-grid array. Full chip standby mode current is 690 A (with data retention), resulting in a 500 hour complete GSM/EDGE terminal autonomy.