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JSSC 2006第1期Memory130nmSRAM

A Sub-05-V Operating Embedded SRAM Featuring a Multi-Bit-Error-Immune Hidden-ECC

提出一种低电压操作嵌入式SRAM,采用隐藏式ECC和多列ECC字分配技术,提升抗多比特错误能力。
130nm CMOS, 32-Kbit SRAM, 0.3V@6.8MHz, 0.4V@30MHz, 1.5V@960MHz
嵌入式SRAM低电压操作隐藏式ECC多比特错误免疫写入复制电路
隐藏式错误检查与纠正(HECC)方案,减少ECC逻辑对输出关键路径的访问时间影响
多列ECC字分配(MCE)技术,增强抗多比特错误能力,同时最小化面积开销
源级调整直接感测放大器(SLAD)和不对称复制存储器单元(WRAM)的写入复制电路,实现设备波动容忍访问控制
Abstract
The mobile multi-media applications require to lower the operating voltage of embedded SRAMs. The ECC circuit implementation for increasing soft-error and the access timing control that tracks access delay fluctuation in memory core should be considered for the low-voltage operation. A hidden error-check-and-correction (HECC) scheme compensated the access time penalty caused by the ECC logic on the output critical path. And a multi-column ECC word assignment (MCE) increased the multi-bit-error im