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Low-Power InP-HEMT Switch ICs Integrating Miniaturized 2 2 Switches for 10-Gb/s Systems
本文提出了一种零功耗的宽频冷FET开关，采用InP HEMT技术实现DC至10GHz以上的SPDT开关。
插入损耗小于1.16 dB，隔离度大于21.2 dB（低于10 GHz）
InP HEMTSPDT开关宽频零功耗高速开关
▸创新点1：零功耗设计（电路创新）。通过冷FET开关技术实现宽频带操作，无需外部电源，显著降低功耗，适用于低功耗应用场景。
▸创新点2：使用InP HEMT技术（器件创新）。采用低Rds(on)的InP HEMT器件，实现DC至10 GHz以上的单刀双掷（SPDT）开关，无需使用并联FET，简化电路结构。
▸创新点3：逻辑电平独立接口（系统创新）。通过串联FET配置，支持正控制电压操作，兼容正负逻辑电平输入，增强系统灵活性。
▸创新点4：高速开关性能（性能创新）。实现140 ps的极快开关速度，支持高达12.5 Gb/s的无误码操作，满足高速通信需求。
Abstract
This paper presents a wideband cold-FET switch with virtually zero power dissipation. The use of InP HEMTs with a low /82/111/110 /67/111/11product enables us to configure a DC-to-over-10-GHz single-pole double-throw (SPDT) switch without using a shunt FET. The series-FET configuration offers a logic-level-inde- pendent interface and makes possible positive control voltage operation in spite of using depletion-mode FETs. A miniaturized 2 2 switch using two SPDT switches yields an insertion loss of less than 1.16 dB and isolation of more than 21.2 dB below 10 GHz, which allows us to increase the scale of the switch in a single chip easily. The add-drop operation combining two 2 2 switches in a single chip and a 4 4 switch IC integrating four 2 2 switches are presented. The packaged ICs achieve error-free operation up to 12.5 Gb/s with either positive or negative logic-level input. Extremely fast switching of 140 ps is also successfully demon- strated.