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A 05-V 25-MHz 1-mW 256-Kb MTCMOSSOI SRAM for Solar-Power-Operated Portable Perso
采用MTCMOS技术和SOI器件的256Kb SRAM，适用于太阳能供电便携设备，具有低功耗和高速度特性。
0.5V (SRAM核心), 1V (I/O缓冲器), 25MHz, 1mW
MTCMOSSOISRAM低功耗太阳能供电
▸采用多阈值电压CMOS(MTCMOS)技术
▸使用SOI器件降低漏电流
▸新型存储器单元设计提高读取电流
Abstract
Multithreshold-voltage CMOS (MTCMOS) tech-
nology has a great advantage in that it provides high-speed
operation with low supply voltages of less than 1 V . A logic gate
with low-V /116/104MOSFETs has a high operating speed, while a
low-leakage power switch with a high-V /116/104MOSFET eliminates
the off-leakage current during sleep time. By using MTCMOS
circuits and silicon-on-insulator (SOI) devices, the authors have
developed a 256-Kb SRAM for solar-power-operated digital
equipment. A double-