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JSSC 2006第3期RF & Wireless0.18μm

A /4378 dBm IIP2 CMOS Direct Downconversion Mixer for Fully Integrated UMTS Receivers

设计了一种用于UMTS接收器的低功耗高线性度CMOS下变频混频器
4378 dBm IIP2, 16-dB增益, 4.5-MHz输出带宽, -310-dBm带外IIP3, 4-nV/√Hz输入噪声密度, 4 mA@1.8V
CMOS混频器直接下变频线性度UMTS接收器第二代互调
电路创新:RC退化输入跨导器设计,通过电阻电容退化技术有效提升线性度,降低二阶互调失真,显著提高IIP2至4378 dBm。
电路创新:精确匹配输出电阻,通过优化电阻匹配减少非线性效应,提升整体电路的线性性能和信号完整性。
电路创新:调谐开关对共源极寄生电容,通过精确调谐消除寄生电容影响,进一步优化二阶互调性能,确保电路稳定性。
系统创新:全集成CMOS直接下变频混频器设计,无需外部SAW滤波器,降低成本并简化系统架构,适用于UMTS接收机。
Abstract
The demanding dynamic range required by receivers for cell-phone applications makes the design of low-power fully integrated CMOS solutions extremely challenging. Commercially available third-generation (3G) products adopt a hybrid direct conversion architecture, where an inter-stage surface acoustic wave (SA W) filter between low noise amplifier (LNA) and mixer attenuates out-of-band interferers, alleviating linearity require- ments set on the downconversion mixer. As a drawback, an off-chip component and an additional LNA are introduced, raising costs. Leveraging an in-depth analysis of second-order inter-modu- lation mechanisms in active downconversion mixers, this paper presents the design of a 0.18- m CMOS solution with outstanding linearity and noise performances. The input transconductor is RC degenerated, the output resistors are carefully matched and, most important, the parasitic capacitors at switching pair common sources are tuned out. Sixty samples from two distinct fabrication lots have been characterized. Minimum IIP2 is /4378 dBm. For comparison, a second solution where inter-modulation products generated by the switching pair are not filtered out has been fabricated and tested. IIP2 values are always lower. Other measured performance results are: 16-dB gain with 4.5-MHz output bandwidth; /4310-dBm out-of-band IIP3; 4-nV Hz input referred noise voltage density while drawing 4 mA from 1.8 V.