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A Comparison of Substrate Noise Coupling in Lightly and Heavily Doped CMOS Proce
比较轻掺杂和重掺杂CMOS工艺中2.4GHz低噪声放大器的衬底噪声耦合特性。
2.4GHz低噪声放大器
衬底噪声耦合CMOS工艺低噪声放大器差分拓扑准差分放大器
▸比较轻掺杂和重掺杂CMOS衬底的噪声耦合差异
▸提出新型准差分放大器拓扑结构
▸验证SPICE模型与实测噪声耦合的一致性
Abstract
This paper examines the substrate noise injected into
three different types of 2.4-GHz low-noise amplifiers for both
heavily and lightly doped CMOS substrates. The amplifiers in-
clude the commonly used single-ended and differential topologies
as well as a new quasi-differential amplifier. For the single-ended
amplifier, the noise coupling modeled in SPICE is in good agree-
ment with measurements. Using these models and simulations,
the major noise coupling mechanisms are identified and methods
of no