JSSC 2006第3期RF & Wireless

A Comparison of Substrate Noise Coupling in Lightly and Heavily Doped CMOS Processes for 2.4-GHz LNAs

比较轻掺杂和重掺杂CMOS工艺中2.4GHz低噪声放大器的衬底噪声耦合特性。

2.4GHz低噪声放大器

衬底噪声耦合CMOS工艺低噪声放大器差分拓扑准差分放大器

▸比较轻掺杂和重掺杂CMOS衬底的噪声耦合差异

▸提出新型准差分放大器拓扑结构

▸验证SPICE模型与实测噪声耦合的一致性

Abstract

This paper examines the substrate noise injected into three different types of 2.4-GHz low-noise ampliﬁers for both heavily and lightly doped CMOS substrates. The ampliﬁers in- clude the commonly used single-ended and differential topologies as well as a new quasi-differential ampliﬁer. For the single-ended ampliﬁer, the noise coupling modeled in SPICE is in good agree- ment with measurements. Using these models and simulations, the major noise coupling mechanisms are identiﬁed and methods of noise mitigation are evaluated. In the differential ampliﬁer, it is shown that even though the substrate noise is common mode, the intermodulation noise is not reduced. The quasi-differential ampliﬁer performance is comparable to the differential ampliﬁer for lightly doped substrates.