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JSSC 2006第4期Other90nm

Delay and Power Monitoring Schemes for Minimizing Power Consumption by Means of Supply and Threshold V oltage Control in Active and

提出动态控制供电电压和阈值电压的延迟与功耗监测方案,以最小化芯片功耗。
90nm CMOS
动态电压控制阈值电压调整功耗优化延迟监测待机模式
动态控制供电电压和阈值电压以优化功耗
基于延迟监测结果选择供电电压或阈值电压控制以避免振荡
改进待机模式下的功耗监测精度,考虑栅氧泄漏电流影响
Abstract
This paper describes newly developed delay and power monitoring schemes for minimizing power consumption by means of the dynamic control of supply voltage /68/68and threshold voltage /84/72in active and standby modes. In the active mode, on the basis of delay monitoring results, either /68/68control or /84/72 control is selected to avoid any oscillation problem between them. In /68/68control, on the basis of delay monitoring results, /68/68is adjusted so as to be maintained at the minimum value at which the chip is able to operate for a given clock frequency. In /84/72 control, on the basis of power monitoring results, /84/72is adjusted so as to maintain a certain switching current /83/87/leakage current /76/69/65/75ratio known to indicate minimum power consumption. In the standby mode, the precision of power monitoring (which detects optimum body bias by comparing subthreshold current /83/85/66/84/72to substrate current /83/85/66) is improved by taking into consideration both the effects of lowering /68/68and the effects of the presence of gate-oxide leakage current. Experimental results with a 90-nm CMOS device indicate that use of the proposed power monitoring results in the successful minimizing of power consumption. It does so by making it possible to: 1) maintain the /83/87 /76/69/65/75ratio in the active mode and 2) detect optimum body bias conditions /40 /83/85/66/84/72/61 /83/85/66/41within an error of less than 20% with respect to actual minimum leakage current valu