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10-Gb/s Modulator Drivers With Local Feedback Networks Day-Uei Li and Chia-Ming Tsai
提出新型反馈网络ICBCFN和IDGCFN，实现10Gb/s调制驱动器，性能优于现有硅基驱动器。
差分输出摆幅9V/8V，上升/下降时间<29ps
调制驱动器反馈网络SiGe BiCMOSCMOS高速电路
▸新型集电极-基极电容反馈网络(ICBCFN)
▸改进为漏极-栅极电容反馈网络(IDGCFN)
▸低功耗设计(0.6W)
Abstract
A novel intrinsic collector-base capacitance /40/67/67/66/41 feedback network (ICBCFN) was incorporated into the conven- tional cascode and series-connected voltage balancing (SCVB) circuit configurations to implement 10-Gb/s modulator drivers. The drivers fabricated in 0.35- m SiGe BiCMOS process could generate 9 /86/80/80differential output swings with rise/fall time of less than 29 ps. Also, the ICBCFN was modified as an intrinsic drain-gate capacitance feedback network (IDGCFN) to implement drivers with differential output swing of 8 /86/80/80in 0.18- m CMOS process. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than that of the currently reported Silicon-based drivers.