← 返回 JSSC 论文列表JSSC 2006第5期RF & Wireless0.15μm GaAs pHEMTPLL
A Fully Integrated V-Band PLL MMIC Using 015-22m GaAs pHEMT Technology
采用0.15μm GaAs pHEMT技术开发的全集成V波段PLL MMIC，具有低功耗和良好相位噪声。
60.1 GHz, 840 MHz锁定范围, 370 mW功耗, 95.5 dBc/Hz相位噪声
V波段PLLMMICGaAs pHEMT相位噪声
▸创新点1：宽带三分频频率分频器采用级联FET结构，通过谐波注入锁定技术实现V波段高频信号的高效分频，显著提升了分频器的带宽和稳定性，支持840 MHz的锁定范围。
▸创新点2：第四亚谐波混频器作为相位检测器，利用反并联二极管对实现高频相位检测，将参考振荡器频率降低至输出信号的十二分之一，大幅降低了系统对参考频率的要求。
▸创新点3：集成低通滤波器和直流放大器，有效抑制杂散和谐波信号，同时提升环路增益，优化了系统相位噪声性能（-95.5 dBc/Hz @100 kHz偏移）。
▸创新点4：采用缓冲放大器隔离VCO和分频器输出，减少电路互扰和频率牵引效应，提升了系统整体稳定性和集成度（芯片尺寸仅2.35×1.80 mm²）。
Abstract
A fully integrated V-band phase-locked loop (PLL)
MMIC with good phase noise and low-power consumption is
developed using 0.15-
m GaAs pHEMTs. For V-band frequency
division, a wideband divide-by-3 frequency divider is proposed
using cascode FET-based harmonic injection locking. The fourth
subharmonic mixer using anti-parallel diode pair is employed
as a high-frequency phase detector. In this way, the required
frequency of the reference oscillator is lowered to one twelfth of
V-band output signal