← 返回 JSSC 论文列表JSSC 2006第5期RF & Wireless0.25μm SiGe BiCMOS
A SiGe PA With Dual Dynamic Bias Control and Memoryless Digital Predistortion fo
采用双动态偏置控制和无记忆数字预失真技术的SiGe功率放大器，提升效率和线性度。
1.95GHz, 18.5dB增益, 5.0%平均效率, ACPR改善10dB
SiGe功率放大器动态偏置控制数字预失真WCDMAACPR
▸双动态偏置控制（集电极电流和电压）
▸无记忆数字预失真线性化器
▸满足3GPP WCDMA线性度规范
Abstract
This paper demonstrates a two-stage 1.95-GHz
WCDMA handset RFIC power amplifier (PA) implemented in a
0.25-
m SiGe BiCMOS process. With an integrated dual dynamic
bias control of the collector current and collector voltage, the av-
erage power efficiency of the two-stage PA is improved from 1.9%
to 5.0%. The measured power gain is 18.5 dB. The gain variation
with dynamic biasing is less than 1.8 dB. An off-chip memoryless
digital predistortion linearizer is also adopted, satisfying the
3GPP wideb