▸创新点1：几何可扩展集总元件建模方法，该方法通过几何参数实现模型的可扩展性，适用于不同尺寸的硅基RFIC设计，显著提高了建模的灵活性和准确性。
▸创新点2：包含趋肤效应和衬底损耗的建模，通过综合考虑高频下的趋肤效应和衬底损耗，提升了模型在高频条件下的精度，适用于复杂RFIC环境。
▸创新点3：图案化接地屏蔽的影响分析，首次在模型中引入图案化接地屏蔽的效应，为硅基RFIC设计提供了更全面的电磁兼容性优化方案。
▸创新点4：模型验证与实测数据匹配，通过实测S参数和阻抗数据验证模型准确性，确保模型在实际应用中的可靠性，匹配和不匹配条件下的性能均得到验证。
Abstract
In this paper, we characterize and model M:N baluns
for silicon RFIC design. A modeling methodology is presented
based on a geometrically scalable lumped-element approach that
incorporates both skin effect and substrate loss. This approach is
extended to include the effects of a patterned ground shield under
the balun. The modeling approach is validated with measured
S-parameters and extracted impedances from various circuit
configurations. The impedance transfer characteristics of the
model and