← 返回 JSSC 论文列表JSSC 2006第5期Power Management0.35μmCharge Pump
Design of Charge Pump Circuit With Consideration of Gate-Oxide Reliability in Lo
设计考虑栅氧可靠性的新型电荷泵电路，提高效率并避免器件过压。
0.35μm CMOS, 3.3V, 输出8.8V
电荷泵栅氧可靠性低电压CMOS泵浦效率电荷传输开关
▸创新点1：采用双泵浦支路设计，通过并行电荷传输路径显著提升电荷泵的输出能力和效率，相比传统单支路设计减少了电荷回流损耗（方法创新）
▸创新点2：电荷传输开关的完全开关控制技术，通过优化栅极驱动信号确保开关在导通和关断状态下的低阻抗与高隔离性，从而降低动态功耗并提升能量转换效率（电路创新）
▸创新点3：严格的栅氧可靠性保护机制，所有器件的栅源/栅漏电压均限制在电源电压VDD以内，避免高压应力导致的栅氧击穿，特别适用于低电压CMOS工艺（可靠性创新）
▸创新点4：实测验证中，四阶电荷泵在2pF泵电容和3.3V供电下输出8.8V，接近工艺极限的pn结击穿电压，证明其高压生成能力与工艺兼容性（性能验证创新）
Abstract
A new charge pump circuit with consideration of gate-
oxide reliability is designed with two pumping branches in this
paper. The charge transfer switches in the new proposed circuit
can be completely turned on and turned off, so its pumping ef-
ficiency is higher than that of the traditional designs. Moreover,
the maximum gate-source and gate-drain voltages of all devices in
the proposed charge pump circuit do not exceed the normal oper-
ating power supply voltage (VDD). Two test chips have been