JSSC 2006第6期Clocking & PLLs0.13μm

Millimeter-Wave V oltage-Controlled Oscillators in 013-22m CMOS Technology

本文介绍了在0.13μm CMOS工艺中设计的毫米波压控振荡器，优化了变容二极管、晶体管和电感设计。

60GHz VCO调谐范围5.8GHz, 99GHz VCO调谐范围2.5GHz, 相位噪声-102.7dBc/Hz@10MHz, 功耗7-15mW@1.5V

毫米波压控振荡器CMOS变容二极管集总元件

▸优化变容二极管设计以平衡品质因数和调谐范围

▸采用集总元件方法实现近100GHz工作的VCO

▸展示了CMOS工艺中最高基频工作频率的电路

Abstract

This paper describes the design of CMOS millimeter- wave voltage controlled oscillators. Varactor, transistor, and in- ductor designs are optimized to reduce the parasitic capacitances. An investigation of tradeoff between quality factor and tuning range for MOS varactors at 24 GHz has shown that the polysilicon gate lengths between 0.18 and 0.24 m result both good quality factor ( 12) and /109/97/120 /109/105/110ratio ( 3) in the 0.13- m CMOS process used for the study. The components were