← 返回 JSSC 论文列表JSSC 2006第7期RF & Wireless0.25μm SiGe BiCMOS
A Low-Power High-Performance SiGe BiCMOS 80211abg Transceiver IC for Cellular an
一款低功耗高性能的SiGe BiCMOS 802.11a/b/g收发器IC,适用于蜂窝和蓝牙系统共存环境
2.8/3.2 dB噪声系数,168/185 mW功耗,2.8 V电压
低功耗高性能SiGe BiCMOS802.11a/b/g收发器
▸创新点1:直接转换收发器架构优化(系统创新)。该架构通过简化信号路径,减少混频器和滤波器数量,显著降低了功耗和芯片面积,同时保持了高性能的RF指标,如噪声系数2.8/3.2 dB。
▸创新点2:低功耗操作不牺牲RF性能(电路创新)。通过优化电路设计,如低噪声放大器(LNA)和混频器,实现了在2.4/5 GHz频段下分别仅消耗168/185 mW的低功耗,同时满足54 Mb/s OFDM模式下的灵敏度要求。
▸创新点3:信号回环和发射功率检测技术(方法创新)。这些技术与基带调制解调器处理器结合,用于校准发射器LO泄漏和收发器I/Q不平衡,提高了系统的整体性能和稳定性。
▸创新点4:70 GHz SiGe BiCMOS工艺应用(工艺创新)。采用先进的70 GHz SiGe BiCMOS技术,实现了系统级封装(SiP)的高集成度,芯片面积仅为4.6 mm²,显著提升了系统的紧凑性和性能。
Abstract
This paper describes a high-performance WLAN
802.11a/b/g radio transceiver, optimized for low-power in mobile
applications, and for co-existence with cellular and Bluetooth
systems in the same terminal.
The direct-conversion transceiver architecture is optimized in
each mode for low-power operation without compromising the
challenging RF performance targets. A key transceiver require-
ment is a sensitivity of
77 dBm (at the LNA input) in 54 Mb/s
OFDM mode while in the presence of a GSM1900 trans