← 返回 JSSC 论文列表JSSC 2006第8期RF & Wireless0.12μm SiGe BiCMOSNeural Network Accelerator
A Wideband 77-GHz 175-dBm Fully Integrated Power Amplifier in Silicon
一款77GHz宽频带功率放大器，具有高增益和高效能，采用SiGe BiCMOS工艺。
17dB峰值增益, 17.5dBm输出功率, 12.8% PAE, 15GHz 3dB带宽, 165mA@1.8V
77GHz功率放大器SiGe BiCMOS宽频带导体背覆共面波导图像抑制
▸全集成50Ω输入输出匹配
▸使用导体背覆共面波导(CBCPW)提高隔离度
▸结合图像抑制滤波器提升IF频率抑制
Abstract
A 77-GHz, /4317.5 dBm power amplifier (PA) with
fully integrated 50- /10input and output matching and fabricated
in a 0.12-
m SiGe BiCMOS process is presented. The PA achieves
a peak power gain of 17 dB and a maximum single-ended output
power of 17.5 dBm with 12.8% of power-added efficiency (PAE).
It has a 3-dB bandwidth of 15 GHz and draws 165 mA from a
1.8-V supply. Conductor-backed coplanar waveguide (CBCPW) is
used as the transmission line structure resulting in large isolation
between adjace