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JSSC 2006第8期Other0.18μm

Silicon-Based Ultra-Wideband Beam-Forming

硅基超宽带波束成形技术实现高分辨率成像
0.18μm BiCMOS SiGe, 2.5V, 87.5mW, 10dB最大增益
超宽带波束成形真时延分布式放大器成像
创新点1:可控真时延和功率增益技术,通过集成可变增益分布式放大器和延迟结构,实现了4-bit延迟变化(64 ps总延迟)和5-dB增益变化(1-dB步进),显著提升了UWB波束形成的灵活性和精度。
创新点2:3位抽头延迟结构与4ps可变延迟分辨率,采用trombone型结构设计,实现了高精度的延迟控制(4-ps分辨率),为超宽带成像提供了亚毫米级(20 mm)的距离分辨率保障。
创新点3:1位32ps固定延迟共面结构,通过优化共面波导布局,在紧凑面积内实现稳定的固定延迟补偿,与可变延迟协同工作以扩展系统整体延迟范围。
创新点4:系统级集成创新,将延迟模块、增益控制模块及分布式放大器在0.18μm BiCMOS SiGe工艺中单片集成,芯片面积仅1.6 mm²,功耗87.5 mW(2.5V供电),同时实现13 GHz的3-dB带宽,兼顾高性能与低功耗。
Abstract
Ultra-wideband (UWB) beam-forming, a special class of multiple-antenna systems, allows for high azimuth and depth resolutions in ranging and imaging applications. This paper re- ports a fully integrated UWB beam-former featuring controllable true time delay and power gain. Several system and circuit level pa- rameters and characterization methods influencing the design and testing of UWB beam-formers are discussed. A UWB beam-former prototype for imaging applications has been fabricated with the