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The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its
研究发现纳米级MOSFET的特性电流密度在不同技术节点和代工厂间保持恒定，提出恒定电流密度偏置方案以优化电路设计。
0.3 mA/μm (峰值), 0.2 mA/μm (峰值), 0.15 mA/μm (最佳噪声系数)
纳米级MOSFET恒定电流密度电路设计技术节点代工厂
▸提出恒定电流密度偏置方案
▸展示特性电流密度在不同电路拓扑中的不变性
▸实现跨技术节点和代工厂的电路移植无需重新设计
Abstract
This paper provides evidence that, as a result of
constant-field scaling, the peak
(approx. 0.3 mA
m), peak
/77/65/88(approx. 0.2 mA
m), and optimum noise figure /78/70/77/73/78
(approx. 0.15 mA
m) current densities of Si and SOI n-channel
MOSFETs are largely unchanged over technology nodes and
foundries. It is demonstrated that the characteristic current
densities also remain invariant for the most common circuit
topologies such as MOSFET cascodes, MOS-SiGe HBT cascodes,
current-mode logic (C