← 返回 JSSC 论文列表JSSC 2006第9期Wireline I/O0.2μm SOI SiGe HBT
A 12.5 Gb/s Electro-Absorption-Modulator Driver Using an Adaptive Compensated Push-Pull Emitter Follower and a Cascode Output Switch With Dynamic
采用60GHz SOI SiGe HBT工艺实现9.953-12.5 Gb/s EAM驱动IC，优化开关速度和低电压操作。
20-120mA调制电流, 1-60mA偏置电流, 15ps抖动, 25ps上升/下降时间, 4.75-5.5V供电
EAM驱动SiGe HBT级联开关共模反馈自适应补偿
▸创新点1：采用级联输出开关技术，显著减少预驱动级的电容负载，提升开关速度至15 ps确定性抖动水平，属于电路结构创新
▸创新点2：通过共模反馈环路生成调制电流，实现低至1.3V的工作电压，同时支持20-120mA宽范围调制电流，属于偏置电路设计创新
▸创新点3：开发自适应RC补偿网络，动态跟踪调制电流变化，有效消除末级射极跟随器的电感效应，改善高频响应特性，属于稳定性优化创新
▸创新点4：采用动态偏置技术，根据电源电压/温度/工艺角自动分配级联器件的工作裕度，在4.75-5.5V供电范围内保持最佳性能，属于可靠性增强创新
Abstract
A 9.953–12.5 Gb/s EAM driver IC was realized in a 60 GHz /102/84 0.2 m SOI SiGe HBT process. Fast switching was achieved by using a cascode output switch that minimizes the ca- pacitive load on the pre-driver and also allows an on-chip sum- mation of the bias and modulation currents without degrading the signal path bandwidth. Low voltage operation was achieved by generating the modulation current with a common-mode feedback loop. Dynamic biasing was used to optimally allocate the headroom voltage between the switch and its cascode devices over supply, temperature, bias and modulation corners. An adaptive RC com- pensation that tracks the modulation current was implemented to cancel the inductive behavior of the last emitter follower stage. The EAM driver specifications include 20 to 120 mA modulation cur- rent range, 1 to 60 mA bias current range, 15 ps/112/112deterministic jitter, 25 ps rise/fall time, 80 ps pulse-width adjustment, 4.75 to 5.5 V supply voltage and 1.3 1.7 mm/50die area.