JSSC 2006第9期Wireline I/O0.2μm SOI SiGe HBT

Notice of Violation of IEEE Publication Principles A 125 Gbs Electro-Absorption-

采用60GHz SOI SiGe HBT工艺实现9.953-12.5 Gb/s EAM驱动IC，优化开关速度和低电压操作。

20-120mA调制电流, 1-60mA偏置电流, 15ps抖动, 25ps上升/下降时间, 4.75-5.5V供电

EAM驱动SiGe HBT级联开关共模反馈自适应补偿

▸创新点1：采用级联输出开关技术，显著减少预驱动级的电容负载，提升开关速度至15 ps确定性抖动水平，属于电路结构创新

▸创新点2：通过共模反馈环路生成调制电流，实现低至1.3V的工作电压，同时支持20-120mA宽范围调制电流，属于偏置电路设计创新

▸创新点3：开发自适应RC补偿网络，动态跟踪调制电流变化，有效消除末级射极跟随器的电感效应，改善高频响应特性，属于稳定性优化创新

▸创新点4：采用动态偏置技术，根据电源电压/温度/工艺角自动分配级联器件的工作裕度，在4.75-5.5V供电范围内保持最佳性能，属于可靠性增强创新

Abstract

A 9.953–12.5 Gb/s EAM driver IC was realized in a 60 GHz /102/84 0.2 m SOI SiGe HBT process. Fast switching was achieved by using a cascode output switch that minimizes the ca- pacitive load on the pre-driver and also allows an on-chip sum- mation of the bias and modulation currents without degrading the signal path bandwidth. Low voltage operation was achieved by generating the modulation current with a common-mode feedback loop. Dynamic biasing was used to optimally allocate the headroom volt