JSSC 2006第10期Other0.15μm

A 2.8-W Q-Band High-Efﬁciency Power Ampliﬁer

一款高效能Q波段功率放大器，最大功率2.8W，效率达29%。

42–46 GHz, 2.8 W (34.5 dBm), 23% to 26% PAE

Q波段功率放大器高效率HEMT毫米波

▸采用0.15μm InGaAs/GaAs HEMT工艺

▸输入馈电网络的有效相位补偿

▸低损耗输出组合网络

Abstract

A highly efﬁcient and high-power monolithic power ampliﬁer operating at Q-band is presented utilizing 0.15- m pseudomorphic InGaAs/GaAs HEMT production process on 2-mil-thick substrate. Over 42–46 GHz frequency range, the ampliﬁer demonstrated maximum power of 2.8 W (34.5 dBm) and power-added efﬁciency (PAE) of 23% to 26% when operated at 5 V and 250 mA/mm. The ampliﬁer attained maximum PAE of 24% to 29% and power of 33.6–34 dBm when biased at 5 V and 125 mA/mm. At these power levels and PAEs, the ampliﬁer exhibited power densities in excess of 430 mW/mm. With device periphery ratio of 1:2.857, effective phase compensation of the input feed network, and low-loss output-combining network, the power ampliﬁer has been able to attain state-of-the-art efﬁciency and power performance.