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JSSC 2006第10期Digital Circuits0.18μmNeural Network Accelerator

Frequency-Independent Asymmetric Double- 25 Equivalent Circuit for On-Chip Spira

提出了一种频率无关的非对称双等效电路模型,用于片上螺旋电感的高精度建模。
0.18μm CMOS工艺,宽频率范围(超过自谐振频率)
片上螺旋电感非对称等效电路频率无关模型趋肤效应邻近效应
引入非对称双等效电路模型,包含高阶寄生效应如趋肤效应和邻近效应
提出基于物理分析的分配因子,用于表征电感的非对称特性
开发了基于S参数测量的新型模型参数提取方法
Abstract
We present a frequency-independent compact model for silicon on-chip spiral inductors with an asymmetric double- equivalent circuit incorporating high-order parasitics such as skin effect and proximity effect. A set of partition factors for param- eter ratios between the input and output segments has been in- troduced and derived from physical analysis to characterize the non-symmetrical feature of the inductor. A novel approach to ex- tracting the model parameters is also developed based on mea