JSSC 2006第10期Clocking & PLLs0.25μm SiGe BiCMOSVCO

Novel VCO Architecture Using Series Above-IC FBAR and Parallel LC Resonance

采用串联FBAR和并联LC谐振的新型VCO架构，显著改善相位噪声性能

144.1 dBc/Hz @1MHz, 149.6 dBc/Hz @3MHz

FBAR振荡器相位噪声SiGe BiCMOS电压调谐无线标准

▸串联FBAR与并联LC谐振的混合架构

▸SiGe BiCMOS工艺上的后处理FBAR集成

▸克服高频调谐困难的创新设计

Abstract

A quasi-monolithic voltage-tunable ﬁlm bulk acoustic resonator (FBAR) enhanced oscillator for 2.1 GHz in 0.25- m SiGe BiCMOS technology is designed, fabricated, and evalu- ated. The narrow-band FBAR was built above the SiGe circuit through later Si post-processing steps. The oscillator is based on a two-transistor loop structure and uses two resonators, namely a parallel LC tank and an above-IC FBAR in its series-resonant mode. The improvement in phase noise performance is signiﬁcant compared t