JSSC 2006第10期Wireline I/OInP DHBT, 0.18μm SiGe BiCMOS

OCTOBER 2006 VOLUME 41 NUMBER 10 IJSCBC ISSN 0018-9200 EDITORIAL New Associate E

IEEE JSSC期刊2006年10月特刊聚焦化合物半导体集成电路，涵盖高速信号处理与功率放大器设计。

23Gb/s, 165Gb/s, 80Gbit/s, 40Gb/s, 2.8W

化合物半导体高速信号处理功率放大器InP DHBTSiGe BiCMOS

▸60mW每通道23Gb/s PRBS生成器

▸165Gb/s 4:1多路复用器InP DHBT技术

▸80Gbit/s集成CDR/DEMUX IC

▸40Gb/s前瞻性决策反馈均衡器

▸2.8W Q波段高效功率放大器

Abstract

195 Introduction to the Special Issue on the Second IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) .......................................... .......................................... D. S. McPherson and T. S. Kaplan 2196 CSICS/BCTM PAPERS A 60 mW per Lane, 4 23-Gb/s 2 1 PRBS Generator ................... ................... E. Laskin and S. P . Voinigescu 2198 A 165-Gb/s 4:1 Multiplexer in InP DHBT Technology .. .............. ................ J . Hallin, T. Kjellberg, and