JSSC 2006第11期Memory130nmFlash Memory

A 18-V 256-Mb Multilevel Cell NOR Flash Memory With BGO Function

介绍了一种采用130nm CMOS工艺的1.8V 256Mb四层单元NOR闪存，具备后台操作功能。

1.8V, 256Mb, 67ns随机访问时间, 54MHz突发读取, 100k编程/擦除周期

NOR闪存四层单元后台操作本地互连镜像电流感应

▸采用本地互连降低源极电阻

▸镜像电流感应读取架构实现快速随机访问

▸双步脉冲编程算法提高编程/擦除可靠性

Abstract

This paper describes a 1.8-V-only 256-Mb four- level-cell (2 b/cell) NOR ﬂash memory with background opera- tion (BGO) function fabricated in a 130-nm CMOS self-aligned shallow trench isolation (SA-STI) process technology. The new memory array architecture is adopted in which the ﬂash source is connected by local interconnect to reduce the source resistance and constrain the ﬂoating-gate coupling effect. The mirrored current sensing read architecture for multilevel-cell operation at a supply vol