← 返回 JSSC 论文列表JSSC 2006第12期RF & Wireless0.13μm
A Fully Integrated 20-Gbs Optoelectronic Transceiver Implemented in a Standard 0
在0.13微米CMOS SOI工艺上实现的双通道20Gb/s光电收发器芯片
20 Gb/s, BER<10^-12, 1.25W/通道
光电收发器CMOS SOI高速调制光学接收系统集成
▸标准CMOS工艺集成光电功能
▸SOI衬底实现高速光电调制与接收
▸双通道架构实现20Gb/s总速率
Abstract
A dual-channel 10 Gb/s per channel single-chip opto-
electronic transceiver has been demonstrated in a 0.13-
m CMOS
SOI technology. The transceiver integrates conventionally discrete
optoelectronic functions such as high-speed 10-Gb/s electro-optic
modulation and 10-Gb/s optical reception on an SOI substrate
using a standard CMOS process. The high optical index contrast
between silicon
/40
/61/51
/53/41and its oxide /40
/61/49
/53/41allows for
very large scale integration of optical devices,