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JSSC 2006第12期RF & Wireless0.13μm

A Fully Integrated 20-Gbs Optoelectronic Transceiver Implemented in a Standard 0

在0.13微米CMOS SOI工艺上实现的双通道20Gb/s光电收发器芯片
20 Gb/s, BER<10^-12, 1.25W/通道
光电收发器CMOS SOI高速调制光学接收系统集成
标准CMOS工艺集成光电功能
SOI衬底实现高速光电调制与接收
双通道架构实现20Gb/s总速率
Abstract
A dual-channel 10 Gb/s per channel single-chip opto- electronic transceiver has been demonstrated in a 0.13- m CMOS SOI technology. The transceiver integrates conventionally discrete optoelectronic functions such as high-speed 10-Gb/s electro-optic modulation and 10-Gb/s optical reception on an SOI substrate using a standard CMOS process. The high optical index contrast between silicon /40 /61/51 /53/41and its oxide /40 /61/49 /53/41allows for very large scale integration of optical devices,