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A Breakdown V oltage Multiplier for High V oltage
提出新型击穿电压倍增器，实现低击穿电压晶体管产生高输出电压摆幅。
10 Gb/s, 8 V differential output swing, 50/10 load
击穿电压倍增器高电压摆幅SiGe BiCMOS光学调制器驱动BV-Doubler拓扑
▸创新点1：击穿电压倍增器技术通过创新的电路设计，使得低击穿电压晶体管能够产生高输出电压摆幅，具体实现了在50Ω负载上8V的差分输出电压摆幅，突破了传统晶体管的电压限制。
▸创新点2：动态响应优化通过精确的时序分析，优化了电路的动态性能，确保了在10 Gb/s高速数据传输下的稳定性和可靠性，显著提升了高频应用的性能指标。
▸创新点3：BV-Doubler拓扑结构创新性地实现了输出电压摆幅的两倍提升，同时避免了单个晶体管承受过高的电压应力，提高了系统的整体可靠性和寿命。
▸创新点4：采用SiGe BiCMOS工艺实现的高电压摆幅驱动器，结合了双极型和CMOS技术的优势，提供了高性能和低功耗的解决方案，适用于高速光调制器等应用场景。
Abstract
A novel breakdown voltage (BV) multiplier is intro- duced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response. A 10 Gb/s op- tical modulator driver with a differential output voltage swing of 8 V on a 50 /10load was implemented in a SiGe BiCMOS process. It uses the BV-Doubler topology to achieve output swings twice the collector–emitter breakdown voltage without stressing any single transistor.