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A 20-Gb/s Simultaneous Bidirectional Transceiver Using a Resistor-Transconductor Hybrid in 0.11-/22m CMOS
一种采用电阻-跨导混合器的20Gb/s双向收发器，无需复制驱动器即可分离信号。
0.11μm CMOS, 20Gb/s, 260mW, BER<10^-12, 1.02mm²
双向收发器电阻-跨导混合器高速数据传输CMOS信号分离
▸使用电阻-跨导混合器（R-gm hybrid）分离输入信号与信号线电压和电流
▸无需复制驱动器，避免了主驱动器与复制驱动器之间的精确匹配需求
▸实现每差分对20Gb/s的数据传输速率，为双向信号传输中的最高速率
Abstract
This paper presents a 20-Gb/s simultaneous bidirec- tional transceiver using a resistor-transconductor (R-gm) hybrid in standard 0.11- m CMOS. The R-gm hybrid separates the inbound signal from the signal line voltage and current without using a replica driver. It eliminates the need for precise matching between the replica- and main-driver characteristics, enabling a data rate of 20 Gb/s per differential pair, which is the highest reported for bidirectional signaling. The transceiver occupies 1.02 mm /50and consumes 260 mW at 20 Gb/s with a bit error rate of less than 10 /49/50. The area and power overhead due to the hybrid are 0.002 mm/50and 7 mW, and correspond to 0.2% and 3% of the total transceiver area and power consumption.