← 返回 JSSC 论文列表JSSC 2007第3期RF & Wireless0.18μmNeural Network Accelerator
A Low-Cost and Low-Power CMOS Receiver Front-End for MB-OFDM Ultra-Wideband Systems
本文提出了一种低成本低功耗的CMOS接收前端，适用于MB-OFDM超宽带系统。
0.18μm CMOS, 2.3V, 19.5mA, 21dB增益, <6.6dB噪声系数, 5.6dBm IIP3
CMOS接收前端MB-OFDM超宽带低噪声放大器下变频器
▸创新点1：采用无片上电感设计（电路创新），通过优化电路拓扑结构避免使用传统电感，显著减少芯片面积（0.35 mm²）和工艺复杂度，同时保持21 dB增益和<6.6 dB噪声系数。
▸创新点2：完全集成化匹配网络（系统创新），无需片外匹配组件，通过内部自适应电路实现全频段（3.1-8 GHz）阻抗匹配，降低BOM成本和PCB设计难度。
▸创新点3：宽带低功耗架构（方法创新），在2.3V电源下仅消耗19.5mA电流，通过多级级联噪声抵消技术和动态偏置实现5.6 dBm IIP3，覆盖14个MB-OFDM子带。
▸创新点4：基于0.18μm CMOS工艺的混合信号协同设计（工艺创新），将LNA、下变频器和带通滤波器集成于单一芯片，实测带内波动<1.2dB，验证了无电感方案的可行性。
Abstract
This paper presents an RF receiver front-end for MB-OFDM-based ultra-wideband (UWB) systems. The receiver occupies only 0.35 mm /50in a 0.18 m CMOS process and consists of a low-noise amplifier, downconverter and a bandpass filter. There are no on-chip inductors and the receiver requires no off-chip matching components. The measured receiver gain is 21 dB, noise figure is less than 6.6 dB, input IIP /51is 5.6 dBm, and the receiver consumes 19.5 mA from a 2.3 V supply. The receiver covers all the MB-OFDM bands from 3.1 to 8 GHz.