JSSC 2007第3期Other0.13μm

CMOS T/R Switch Design: Towards Ultra-Wideband and

本文提出了一种面向超宽带和高频率的CMOS T/R开关设计方法，通过定制晶体管布局和双阱体浮空技术，实现了低插入损耗和高隔离度。

0.13μm CMOS, 插入损耗<2 dB, 隔离度>21 dB, 频率达20 GHz

CMOST/R开关超宽带高频率线性度

▸定制晶体管布局：通过优化晶体管布局设计，显著降低了寄生效应，提高了开关的插入损耗和隔离性能，插入损耗小于2 dB，隔离度高于21 dB，适用于高达20 GHz的超宽带应用。

▸双阱体浮空技术：采用创新的双阱体浮空技术，有效提升了开关的线性度，实现了超过30-dBm的功率1-dB压缩点，同时减少了信号失真，适用于高频高线性度场景。

▸无并联臂差分开关架构：提出了一种新型的差分开关架构，省略了传统的并联臂设计，简化了电路结构，同时保持了优异的性能，插入损耗和隔离度均达到先进水平，适用于超宽带通信系统。

▸超宽带性能优化：通过综合应用定制晶体管布局、双阱体浮空技术和差分开关架构，实现了从低频到20 GHz的超宽带性能，插入损耗和隔离度在全频段内均表现优异，适用于未来高频通信系统。

Abstract

This paper presents the comprehensive consider- ations of CMOS transmit/receive (T/R) switch design towards ultra-wideband and over 15-GHz frequencies. Techniques for minimizing parasitics and increasing linearity are discussed. A customized transistor layout is proposed for T/R switch design and its effects on insertion loss and isolation are studied. The analysis shows that a series-only architecture using the customized transistor layout achieves better insertion loss and reasonable isolation. A double-well body-ﬂoating technique is proposed and its effects are discussed. A differential switch architecture without shunt arms is designed and veriﬁed by experimental results. Fabricated in 0.13- m triple-well CMOS, the T/R switch exhibits less than 2 dB insertion loss and higher than 21 dB isolation up to 20 GHz. With resistive body ﬂoating and differential architecture, the high linearity is of ultra-wideband characteristic, more than 30-dBm power 1-dB compression point /40/80/49/100/66/41is obtained up to 20 GHz in only 0.03 mm /50active die area.