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JSSC 2007第3期Other

Intermodulation Distortion in CMOS Attenuators and Switches

研究CMOS衰减器和开关的互调失真性能及其改进方法
失真性能、线性性能
CMOS衰减器互调失真增益控制短沟道效应线性性能
CMOS衰减器拓扑结构的失真性能分析
利用CMOS器件方程计算失真性能
通过电路设计技术提高衰减器的线性性能
Abstract
Gain control elements are widely used in communica- tion systems both to limit the incident power to the circuitry and to control the amplitude of the transmitted signal. Attenuators are one way of controlling the signal amplitude. The distortion perfor- mance of common CMOS attenuator topologies is investigated in this work. CMOS device equations that model the device in dif- ferent regions of operation and which also model short channel effects are used for calculating distortion performance. Calculated distortion is compared with simulation results and experimental data, and qualitative explanations of the distortion curves as well as the deviation between different sources of data are given. Potential improvements in linearity performance of attenuators via circuit design techniques have also been discussed.