← 返回 JSSC 论文列表JSSC 2007第5期RF & Wireless0.13μm
A 1.2 V Reactive-Feedback 3.1–10.6 GHz Low-Noise Amplifier in 0.13 /22m CMOS
一款0.13μm CMOS工艺的3.1-10.6 GHz超宽带低噪声放大器，具有15.1 dB增益和2.1 dB噪声系数。
0.13μm CMOS, 1.2V, 9mW
低噪声放大器超宽带CMOS变压器反馈ESD保护
▸创新点1：采用变压器反馈技术（电路创新），通过变压器反馈降低噪声系数并稳定增益，同时优化终端阻抗匹配，噪声系数变化控制在0.43 dB以内，显著提升宽带性能。
▸创新点2：偏置电流复用技术（电路创新），通过复用偏置电流，将芯片功耗降低至9 mW（1.2 V供电），在0.87 mm²面积内实现高效能设计，显著降低功耗。
▸创新点3：分离ESD保护电路与RF输入路径（系统创新），通过变压器反馈实现ESD保护电路与RF信号路径的隔离，提升系统可靠性，同时不影响射频性能。
▸创新点4：全频段3.1–10.6 GHz超宽带覆盖（系统创新），在0.13 µm CMOS工艺下实现15.1 dB增益和2.1 dB最低噪声系数，满足UWB应用需求，性能优异。
Abstract
A 15.1 dB gain, 2.1 dB (min.) noise figure low-noise amplifier (LNA) fabricated in 0.13 m CMOS operates across the entire 3.1–10.6 GHz ultrawideband (UWB). Noise figure variation over the band is limited to 0.43 dB. Reactive (transformer) feed- back reduces the noise figure, stabilizes the gain, and sets the ter- minal impedances over the desired bandwidth. It also provides a means of separating ESD protection circuitry from the RF input path. Bias current-reuse limits power consumption of the 0.87 mm /50 IC to 9 mW from a 1.2 V supply. Comparable measured results are presented from both packaged and wafer probed test samples.