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A Compact, ESD-Protected, SiGe BiCMOS LNA for Ultra-Wideband Applications
提出两款低功耗、ESD保护的SiGe BiCMOS超宽带LNA，适用于10 GHz以下应用。
3.65 mW, 1.5 kV ESD保护, 4-6 dB噪声系数, 15-19 dB增益
超宽带低噪声放大器ESD保护SiGe BiCMOS共基极
▸创新点1：采用共基极结构替代传统共射级联结构，显著节省芯片面积（减少20%），同时保持3.65mW低功耗和1.5kV ESD防护能力，属于电路拓扑创新
▸创新点2：通过消除LC输入匹配网络简化设计，在3-10GHz超宽带范围内实现17-19dB增益和4-5dB低噪声系数（NF），属于匹配网络结构创新
▸创新点3：首次对共基极拓扑中MOS/HBT电流源噪声进行系统建模与分析，提出关键噪声抑制技术，使NF优化至4dB级，属于噪声分析方法创新
▸创新点4：分流峰化负载(resistively loaded)与ESD防护协同设计，在面积缩减20%条件下仍保持15-16dB增益和4.5-6dB NF，属于抗干扰电路创新
Abstract
Two 3.65-mW, ESD-protected, BiCMOS ultra-wide- band low-noise amplifiers (LNAs) for operation up to 10 GHz are presented. These common-base LNAs achieve significant savings in die area over more widely used cascoded common-emitter LNAs because they do not use an LC input matching network. A design with a shunt peaked load achieves a high /83/50/49(17–19 dB) and low noise figure (NF) (4–5 dB) across the band. A resistively loaded de- sign exhibits a lower /83/50/49(15–16 dB) and higher NF (4.5–6 dB), but also utilizes 20% less silicon area. Both LNAs achieve a 1.5 kV ESD protection level and an acceptable /83/49/49( 10 dB) across the band. Current source noise reduction is critical in common base topolo- gies. Therefore, detailed noise analyses of MOS- and HBT-based current sources are provided.