← 返回 JSSC 论文列表JSSC 2007第5期RF & Wireless0.13μmHigh-Speed Link
A Large-Swing Transformer-Boosted Serial Link Transmitter With /62/86/68/68Swing Jintae Kim, Hamid Hatamkhani, and Chih-Kong
介绍了一种采用变压器升压技术的大摆幅串行链路发射器设计。
0.13μm CMOS, 1.2V, 8Gb/s, 1.42V差分输出摆幅, 137mA电流
大摆幅发射器变压器升压串行链路预加重CMOS
▸创新点1：变压器升压技术突破电源电压限制（电路创新）。通过变压器耦合升压技术，实现差分输出摆幅超过电源电压（1.42V@1.2V供电），解决了传统串行链路发射器输出摆幅受限于电源电压的瓶颈问题。
▸创新点2：分布式升压优化输出匹配（系统创新）。采用分布式变压器结构，在多个节点分阶段升压，平衡升压幅度与输出阻抗匹配（反射系数<-10dB@4GHz），避免集中升压导致的带宽和信号完整性下降。
▸创新点3：串联电感隔离保护晶体管耐压（电路创新）。在驱动级与升压变压器间插入串联电感，有效隔离高压信号对CMOS器件的应力（0.13μm工艺下耐受1.42V摆幅），提升可靠性。
▸创新点4：真预加重发射器架构（系统创新）。结合变压器升压与预加重技术，在8Gb/s PRBS数据传输下实现高频补偿，同时保持大信号摆幅（137mA功耗），突破传统预加重电路受电源电压约束的限制。
Abstract
The design and analysis of a large-swing trans- former-boosted serial link transmitter is described. Transformer boosting is used to produce a signal swing that is not constrained by the supply voltage and enables a true pre-emphasis trans- mitter with a differential output swing greater than the supply. The boosted signal is separated from the driver through series inductors and therefore does not stress the transistor voltage tol- erance. Several design tradeoffs between the amounts of boosting, power, and output matching are examined in both analysis and simulation. Distributed boosting is employed to relax the tradeoff between the amount of boosting and output matching degradation. Implemented in a 0.13- m CMOS technology, the prototype chip produces an 8-Gb/s PRBS 2 /51/49 1 data pattern and achieves a 1.42 /86/112/112differential output swing while drawing 137 mA current from a 1.2-V supply. The measured output reflection coefficient is better than 10 dB up to 4 GHz.