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A Ultra-Wideband Amplitude Modulation (AM) Detector Using Schottky Barrier Diodes Fabricated in Foundry CMOS Technology
基于130nm CMOS工艺的肖特基二极管超宽带调幅检测器
输入输出匹配优于10 dB（0-10.3 GHz, 0-1.7 GHz），峰值转换增益2.2 dB，灵敏度53-56 dBm
肖特基二极管超宽带调幅检测器CMOS工艺低功耗
▸使用130nm CMOS工艺的肖特基二极管
▸覆盖超宽带频率范围（3.1-10.6 GHz）
▸低功耗设计（8.5 mW）
Abstract
Utility of Schottky diodes fabricated in foundry dig- ital 130-nm CMOS technology is demonstrated by implementing an ultra-wideband (UWB) amplitude modulation detector con- sisting of a low-noise amplifier (LNA), a Schottky diode rectifier, and a low-pass filter. The input and output matching of the detector is better than 10 dB from 0–10.3 GHz and 0–1.7 GHz, respectively, and almost covers the entire UWB frequency band (3.1–10.6 GHz). The measured peak conversion gain is 2.2 dB. The sensitivity over the band for amplitude modulation with the minimum /69/98 /78/111of 6 dB is between 53 and 56 dBm. The power consumption is only 8.5 mW.