Abstract
An analytical method, along with closed-form solu- tions, to determine high-frequency (HF) noise parameters of the MOSFET from its noise figure (NF) measurements with an ar- bitrary source impedance is presented and experimentally veri- fied. This method allows for the determination of the minimum noise figure, NF /109/105/110, equivalent noise resistance, , and optimum source admittance , of MOSFET directly from a single high- frequency 50-/10noise figure measurement and a model character- ization based on the transistor’s measured scattering parameters. The proposed method can accurately predict the noise parameters of deep-submicron MOSFETs, and hence is useful in the design of low-noise radio-frequency integrated circuits (RFICs). Application of the proposed method in the design of CMOS RF low-noise am- plifiers (LNAs) is also discussed.