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Electronically Temperature Compensated Silicon Bulk Acoustic Resonator
设计并实现了一种基于硅微机械谐振器的电子温度补偿参考振荡器。
频率漂移39 ppm/100°C
温度补偿硅体声波谐振器参考振荡器CMOS频率稳定性
▸电子温度补偿技术：通过创新的温度补偿电路设计，将频率漂移从2830 ppm降低至39 ppm（100°C范围内），显著提升了温度稳定性（方法创新）
▸高Q值硅体声波谐振器设计：优化设计的5.5MHz硅体声波谐振器实现超高品质因数（Q>100,000），同时保持3000 ppm以上的可调性，兼顾性能与调节灵活性（器件创新）
▸CMOS放大器维持振荡：采用0.6μm CMOS工艺实现的放大器电路，有效维持谐振器振荡，实现系统级集成（电路创新）
▸温度补偿与谐振器协同设计：通过电子补偿与谐振器物理特性的联合优化，突破传统单一补偿方式的性能限制（系统级创新）
Abstract
The paper describes the design and implementation of an electronically temperature compensated reference oscillator based on capacitive silicon micromechanical resonators. The de- sign of a 5.5-MHz silicon bulk acoustic resonator has been opti- mized to offer high quality factor ( 100 000) while maintaining tunability in excess of 3000 ppm for fine-tuning and temperature compensation. Oscillations are sustained with a CMOS amplifier. When interfaced with the temperature compensating bias circuit, the oscillator exhibits a frequency drift of 39 ppm over 100 Ca s compared to an uncompensated frequency drift of 2830 ppm over the same range. The sustaining amplifier and compensation cir- cuitry were fabricated in a 2P3M 0.6- m CMOS process.