← 返回 JSSC 论文列表JSSC 2007第7期Memory0.35μmCMOS Image Sensor
A 120-dB Dynamic Range CMOS Image Sensor With Programmable
一款具有120dB动态范围且可编程功率响应曲线的CMOS图像传感器。
120dB动态范围,0.13%时间噪声,0.4%固定模式噪声
CMOS图像传感器动态范围可编程功率响应时间到饱和4T有源像素
▸创新点1:集成4T有源像素结构(电路创新)。该设计在标准CMOS工艺中实现了4晶体管(4T)像素结构,通过分离光电二极管和浮动扩散区,显著降低了暗电流和噪声,提高了像素的灵敏度和动态范围。
▸创新点2:实现时间到饱和方案(系统创新)。通过在每个像素中集成电压比较器和模拟存储器,实现了时间到饱和(TTS)的测量方法,能够同时捕获高光和阴影细节,扩展动态范围至120 dB。
▸创新点3:提供标准集成光电流信号(方法创新)。该传感器不仅支持TTS模式,还能输出传统的积分光电流信号,为用户提供了灵活的信号选择,适应不同的光照条件和应用需求。
▸创新点4:用户可编程功率响应曲线(系统创新)。通过可编程的响应曲线,用户可以根据具体应用调整传感器的响应特性,优化性能,同时无需外部校准,降低了系统复杂性。
Abstract
A high dynamic range CMOS image sensor providing a user-programmable power responsivity curve is presented. Each pixel integrates, besides a 4T active pixel structure, a voltage com- parator and an analog memory to implement a time-to-saturation scheme while also providing the standard integrated photo-current signal. The sensor generates two 10-bit analog outputs allowing a typical dynamic range exceeding 120 dB with a temporal noise lower than 0.13% and a fixed pattern noise of 0.4% (1.7%) of the total signal swing (2 V) at low (high) irradiance without any ex- ternal calibration procedures. A 140 140-pixel array has been fabricated in a 0.35- m, two-poly four-metal (2P4M), 3.3-V stan- dard CMOS technology. The chip measures 3.9 4.6 mm/50with a pixel pitch of 15 m and a fill factor of 20%.