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An EMI Resisting LIN Driver in 0.35-micron High-V oltage CMOS
设计了一种抗电磁干扰的LIN驱动器，通过预定义斜率信号和反馈方案确保数据传输稳定性。
高抗干扰能力，通过直接功率注入(DPI)测试
LIN驱动器电磁干扰反馈方案斜率控制高压CMOS
▸创新点1：预定义斜率信号减少高频电磁辐射（方法创新）。通过精确控制输出信号的上升和下降斜率，有效降低了高频电磁辐射，从而减少了电磁干扰（EMI）对其他电路的潜在影响。
▸创新点2：新型反馈方案抵抗EMI耦合（电路创新）。采用创新的反馈机制，将斜率整形功能与输出级隔离，确保即使在强EMI环境下，驱动电路仍能正常工作，提高了系统的抗干扰能力。
▸创新点3：保持输出信号占空比不受EMI影响（系统创新）。通过优化电路设计，确保在EMI干扰下输出信号的占空比保持不变，从而实现无差错的数据传输，提高了系统的可靠性。
▸创新点4：在直接功率注入（DPI）测试中表现出色（性能创新）。该驱动电路在最高级别的DPI测试中表现优异，无论注入的EMI水平如何，均能保持稳定工作，验证了其在实际应用中的高可靠性。
Abstract
This paper describes the design of a Local Intercon- nect Network (LIN) integrated output driver circuit exhibiting a high degree of immunity against conducted electromagnetic interference (EMI). The transmitted signal of this driver is shaped with a predefined slope so as to reduce electromagnetic emission at higher frequencies. The effect of EMI coupling from the data bus into the driver circuit is countered using a new feedback scheme which shields the slope shaping function from the output stage. Although the output signal may be heavily corrupted by EMI, the LIN driver continues to deliver an unaltered duty cycle, which is mandatory to obtain an error-free data transmission. Mea- surements show that this driver circuit manages to withstand the highest levels of the direct power injection (DPI) measurements independently of the injected EMI level.