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JSSC 2007第7期Other130nm

In-Situ Delay Characterization and Local Supply V oltage Adjustment for Compensation of Local

提出通过调整电路块供电电压补偿局部延迟变化的方法,采用原位延迟特性分析实现最小安全裕度的电压调整。
130nm CMOS, 10%功耗降低
延迟补偿供电电压调整原位特性分析ARM9核心蒙特卡洛仿真
创新点1:原位延迟特性分析技术(方法创新)。提出了一种针对子模块的原位延迟特性分析方法,能够实时监测电路延迟变化,并通过最小安全裕度调整供电电压,有效补偿局部延迟变化,提升电路稳定性。
创新点2:双电源开关方案实现离散电压分配(电路创新)。设计了一种双电源开关方案,能够为单个子模块分配离散电压,实验证明该方案可降低10%的功耗,同时优化了电源管理效率。
创新点3:针对未来技术的高变异性优化(系统创新)。通过蒙特卡罗仿真验证了所提方案在高变异性条件下的有效性,特别适用于未来工艺技术,能够显著提高良率并降低功耗。
创新点4:多电压供电方案的效率与面积权衡(系统创新)。研究表明,使用超过两种供电电压仅带来微小的额外功耗节省,但会显著增加面积开销,为实际应用提供了重要的设计权衡依据。
Abstract
A method is proposed to compensate for local delay variations by adjusting the supply voltage of individual circuit blocks. In-situ characterization of sub-blocks allows for voltage adjustment with minimum safety margin. Different strategies and circuit techniques for in-situ delay characterization of sub-blocks are described and compared. A dual /86/68/68 power switch scheme is proposed for discrete voltage assignment to individual sub-blocks. Experimental results are presented for a test module based on an ARM9 core, fabricated in 130-nm CMOS. Yield improvement and power reduction capabilities are demonstrated by Monte Carlo simulations. For a typical setting, a reduction of 10% in power can be achieved with the proposed dual /86/68/68 power switch concept. Using more than two supply voltages is shown to produce only small additional power savings at the price of high area overhead. The effect of the proposed scheme increases with increasing intra-die variability, which makes it suitable especially for future technologies.