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Design and Scaling of W-Band SiGe BiCMOS VCOs
设计并优化了77-106 GHz SiGe BiCMOS VCO，采用MOS和HBT变容二极管及集成电感。
106 GHz VCO, 2.5V, -101.3 dBc/Hz @1MHz, 87 GHz输出功率-10.5 dBm
SiGe BiCMOSVCO毫米波相位噪声输出功率
▸使用SiGe HBTs监测毫米波噪声性能
▸采用MOS-HBT cascode输出缓冲器
▸在130 nm MOSFETs上实现高输出功率
Abstract
This paper discusses the design of 77–106 GHz Colpitts VCOs fabricated in two generations of SiGe BiCMOS technology, with MOS and HBT varactors, and with integrated inductors. Based on a study of the optimal biasing conditions for minimum phase noise, it is shown that VCOs can be used to monitor the mm-wave noise performance of SiGe HBTs. Mea- surements show a 106 GHz VCO operating from 2.5 V with phase noise of 101.3 dBc/Hz at 1 MHz offset, which delivers/432.5 dBm of differential output power at 25 C, with operation verified up to 125 C. A BiCMOS VCO with a differential MOS-HBT cascode output buffer using 130 nm MOSFETs delivers /4310.5 dBm of output power at 87 GHz.