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Introduction to the 2006 BipolarBiCMOS Circuits and Technology Meeting T HIS sec
介绍2006年Bipolar/BiCMOS电路与技术会议的论文精选，涵盖SiGe BiCMOS技术的高频振荡器设计。
106 GHz VCO, 2.5 V供电, 相位噪声101.3 dBc/Hz at 1 MHz
Bipolar/BiCMOSSiGe电压控制振荡器高频雷达相位噪声
▸SiGe BiCMOS电压控制振荡器设计
▸77至106 GHz高频操作范围
▸Colpitts架构实现
Abstract
L OF
SOLID-STATE CIRCUITS contains extended versions of pa-
pers solicited from presentations at the 2006 Bipolar/BiCMOS
Circuits and Technology Meeting (BCTM), held in Maastricht,
The Netherlands. At the annually held BCTM, process engi-
neers, circuit designers and CAD/modelling engineers present
their latest results in a highly interactive manner. A one-day
short course precedes the conference, and a workshop on Com-
pact Modeling is held after the BCTM. The four papers pre-
sented here were