← 返回 JSSC 论文列表
📄 下载 JSSC 原文 PDF
JSSC 2007第9期Other硅双极工艺

Power Amplifier Protection by Adaptive Output

提出基于自适应输出功率控制的功率放大器保护方案,防止极端条件下的破坏性击穿。
5V电源电压,2W标称输出功率,VSWR=10时最大功率降低2.7dB
功率放大器自适应控制输出功率保护硅双极晶体管VSWR
基于自适应输出功率控制的通用保护方案
集成过压、过热和过流保护功能
在低成本硅技术中实现与GaAs HBT竞争的性能
Abstract
Cellular phone power amplifiers (PAs) operate in strongly varying environments and have to withstand extreme conditions. To avoid destructive breakdown a generic protection concept is proposed that is based on adaptive control of the output power. It provides over-voltage, over-temperature, and/or over-current protection by detection of the collector peak voltage, die temperature, and/or collector current to reduce the effective power control voltage once a threshold level is crossed. By ap- plying protections, PAs can be implemented in low-cost silicon technology competitively to GaAs HBT implementations. In ad- dition, requirements on package thermal resistance are relaxed. In this paper a theoretical analysis is given on the behavior of a class-AB amplifier under mismatch conditions. Measurement results on a silicon bipolar power transistor with integrated protection circuits are presented, proving the concept of adaptive protection. For a supply voltage of 5 V and nominal output power of 2 W no breakdown is observed for a VSWR of 10 over all phases when output power is adaptively reduced by 2.7 dB at most.