JSSC 2007第10期Other

A GaN HEMT Class F Ampliﬁer at 2 GHz With /6280% PAE

设计并测试了一种GaN HEMT Class F放大器，峰值功率附加效率达85%，输出功率16.5W。

85% PAE, 16.5 W输出功率, 2 GHz工作频率

GaN HEMTClass F放大器功率附加效率混合PCB封装高频放大器

▸采用GaN HEMT晶体管和混合PCB封装

▸探索了栅极连接和源极连接场板器件的性能差异

▸分析了Class F与Inverse F在特定条件下的性能比较

Abstract

A Class F ampliﬁer has been designed, fabricated, and tested using a GaN HEMT transistor and hybrid printed circuit board (PCB) packaging. The ampliﬁer has a peak power-added efﬁciency (PAE) of 85% with an output power of 16.5 W. A gate- connected ﬁeld-plated and a source-connected ﬁeld-plated device of the same size and layout were measured in this topology. An output power and drain efﬁciency tradeoff, dependant on the drain impedance at the fundamental frequency due to the on-state resis- tance, is explored. A comparison between Class F and Inverse F, given particular operating conditions for this device, is made.