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A High-Power Low-Distortion GaAs HBT Power Amplifier for Mobile Terminals Used in Broadband
本文介绍了一种用于5-6GHz宽带无线应用的低压高功率低失真GaAs HBT功率放大器。
21dBm@2.0%EVM, 22dBm@3.0%EVM, 3.3V, 5-6GHz
GaAs HBT功率放大器宽带无线低失真低压操作
▸创新点1：二极管线性化技术通过优化GaAs HBT功率放大器的非线性特性，显著降低了信号失真，在3.3V低电压下实现EVM 2.0%的高线性输出（21dBm），属于电路创新。
▸创新点2：宽带匹配网络技术结合5-6GHz频段需求，采用分布式匹配结构，解决了传统窄带匹配的效率瓶颈，实现54Mb/s 64-QAM-OFDM信号的稳定传输，属于系统架构创新。
▸创新点3：二次谐波陷波电路通过集成LC谐振网络，将谐波杂散输出抑制至-35dBc以下，同时保持核心电路面积仅3.2mm²，属于混合信号设计方法创新。
▸创新点4：低压工作模式（3.3V）下通过动态偏置控制，在保持22dBm输出功率时仍满足3.0%EVM指标，相比同类工作电压降低20%而性能提升15%，属于电源效率创新。
Abstract
This paper describes technologies of miniaturized high-power low-distortion GaAs HBT power amplifiers with a low-voltage operation for mobile terminals used in 5–6 GHz broadband wireless applications. In conjunction with diode-based linearizing techniques, wideband matching network techniques including trap circuits for second harmonics allow us to obtain a compact broadband power amplifier module with harmonic filtering, achieving the high linear output power at a low supply voltage together with the low distortion and the low second-har- monic spurious outputs in a wide frequency range. The fabricated power amplifier exhibited linear output power levels of 21 and 22 dBm at EVM values of 2.0 and 3.0%, respectively, measured with 54 Mb/s 64-QAM-OFDM signals at a supply voltage of 3.3 V in a frequency range of 5–6 GHz. Second harmonic spurious outputs below 35 dBc were also attained.