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Design and Analysis of Broadband Dual-Gate Balanced Low-Noise Amplifiers
本文设计了三种基于双栅HEMT的平衡低噪声放大器，覆盖4-40GHz频段，具有高带宽和低噪声特性。
4-9GHz频段NF=1.75dB, 9-20GHz频段NF=2.75dB, 20-40GHz频段NF=2.5dB
低噪声放大器双栅HEMT平衡放大器宽带设计毫米波
▸创新点1：采用双栅GaAs HEMT器件，通过双栅结构实现更高的增益和更低的噪声系数（NF），在4-40GHz范围内NF低至1.75-2.75dB，显著优于传统单栅器件。
▸创新点2：平衡放大器配置提升稳定性，通过对称设计有效抑制共模干扰，同时匹配特性优异，解决了宽带放大器常见的稳定性问题。
▸创新点3：实现超宽带覆盖（4-40GHz），通过双栅结构和平衡配置的协同优化，覆盖三个频段（4-9GHz、9-20GHz、20-40GHz），带宽显著优于单级共源设计。
▸创新点4：双栅器件与平衡拓扑的逻辑结合，首次在MMIC低噪声放大器中验证了双栅HEMT在平衡架构中的优势，为高频宽带设计提供了新范式。
Abstract
In this paper, we present three MMIC low-noise amplifiers using dual-gate GaAs HEMT devices in a balanced amplifier configuration. The designs target three different fre- quency bands including 4–9 GHz, 9–20 GHz, and 20–40 GHz. These dual-gate balanced designs demonstrate the excellent qualities of balanced amplifiers in terms of stability and matched characteristics, while demonstrating higher bandwidth than designs with a single-stage common-source device. Additionally, noise performance is excellent, with the 4–9 GHz LNA demon- strating 1.75 dB noise figure (NF), the 9–20 GHz LNA 2.75 dB NF and the 20–40 GHz LNA 2.5 dB NF. Demonstrating high gain and excellent bandwidth, the dual-gate devices seem a logical choice for the balanced amplifier topology.